sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:2ED1321S12M
Data Manual:2ED1321S12M.pdf
Brand:INFINEON
Particular Year:23+
Package:16-SOIC
Delivery Date:New original
Stock: 2000pcs
2ED1321S12M has symmetric undervoltage lockout levels, which support strongly the integrated ultrafast bootstrap diode.
Features
Unique Infineon Thin-Film-Silicon On Insulator (S0l)-technology
Floating channel designed for bootstrap operation
Maximum bootstrap voltage (VB node) of + 1225 V
Operating voltages (VS node) upto + 1200V
Negative VS transient voltage immunity of 100V
With repetive 700 ns pulses
2.3 A/ 4.6 A peak output source / sink current capability
Integrated ultra-fast over-current protection (OCP)
5% high accuracy reference threshold
Less than 1 us over-current sens to output shutdown
Integrated ultra-fast, low resistance bootstrap diode
Integrated dead-time and shoot- through prevention logic
Enable, Fault, and programmable Fault clear RFE input
Logic operational up to -8 V on VS Pin
Independent per channel undervoltage lockout
25 V VCC supply voltage
Separate Logic and output ground
Greater than 5 mm clearance / creepage
2 kV HBM ESD capability
Applications
Industrial Drives
Embedded inverters for Motor Control in Pumps, Fans
Commercial and Lite Commercial Air Conditioning
Model
Brand
Package
Quantity
Describe
INFINEON
DSO-16
2000
1200V single high-side gate driver IC with active Miller clamp, DESAT and short circuit clamping
INFINEON
DSO-24
2000
Three phase gate driver IC bare die with integrated bootstrap diode and over current protection
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