sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:PSMN4R5-80YSFX
Data Manual:PSMN4R5-80YSFX.pdf
Brand:Nexperia
Particular Year:23+
Package:LFPAK56
Delivery Date:New and Original
Stock: 1000pcs
PSMN4R5-80YSFX 80/100V MOSFETs are recommended for high efficiency switching and high reliability applications.NextPower MOSFETs feature 50% lower RDS(on) and strong avalanche energy resistance. These devices are well suited for power supplies, telecom, industrial designs, USB-PD Type-C chargers and adapters, and 48V DC-DC adapters. The devices feature low body diode losses with Qrr as low as 50 nanocoulombs (nC). This results in lower inverse recovery current (IRR), lower voltage spikes (Vpeak), and lower ringing to further optimise dead time.
Product Attributes
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss): 80 V
Current at 25°C - continuous drain (Id): 100 A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
On Resistance (Max) at Different Id, Vgs: 4.5 mOhm @ 25A, 10V
Vgs(th) at different Id (max): 4V @ 1mA
Gate Charge (Qg) (max) at varying Vgs: 90 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 6009 pF @ 40 V
Power Dissipation (Max): 238W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package/Housing: SC-100, SOT-669
Applikationer
● Synchronous Rectifiers in AC-DC and DC-DC
● Primary switching in DC-DC
● Brushless DC motor control
● USB-PD adapters
● Full- and half-bridge applications
● Flyback and resonant topologies
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