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2ED21824S06JXUMA1 is 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-14 package.

Summary of Features

Operating voltages (VS node) upto + 650 V

Negative VS transient immunity of 100 V

Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost

High and Low Voltage Pins Separated for Maximum Creepage and Clearance

Separate logic and power ground

Floating channel designed for bootstrap operation

Integrated shoot-through protection with built-in dead time (programmable deadtime)

Maximum supply voltage of 25 V

Independent under voltage lockout (UVLO) for both channels

200 ns propagation delay

HIN, LIN input logic

Logic Operational up to –11 V on VS Pin

Negative Voltage Tolerance On Inputs of –5 V

The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration

Benefits

Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design

50% lower level-shift losses

Excellent ruggedness and noise immunity against negative transient voltages on VS pin

Applications

Home appliances

Motor control and drives

Power tools

Switched mode power supplies (SMPS)

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