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2ED2181S06FXUMA1 is 650 V high and low sidegate driver with high current, and high speed to drive MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-8 package.

Summary of Features

Operating voltages (VS node) upto + 650 V

Negative VS transient immunity of 100 V

Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost

Floating channel designed for bootstrap operation

Maximum supply voltage of 25 V

Independent under voltage lockout (UVLO) for both channels

200 ns propagation delay

HIN, LIN input logic

Logic Operational up to –11 V on VS Pin

Negative Voltage Tolerance On Inputs of –5 V

The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration

Applications

Home appliances

Motor control and drives

Power tools

Switched mode power supplies (SMPS)

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