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INFINEON S26HS512TGABHI003 High-Density SEMPER™ NOR Flash Memory IC

Product Description of S26HS512TGABHI003

S26HS512TGABHI003 is a member of the SEMPER™ NOR Flash Memory family from Infineon and boasts a density of 512 Mbit. This device operates on a HYPERBUS interface with a bandwidth of 400 MByte/s and an operating voltage of 1.8 V. It features a lightening-fast interface frequency of 200 MHz (DDR) and is enclosed in a robust Infineon PG-BGA-24 package.

The Infineon SEMPER™ Flash family of products are high-speed CMOS, MIRRORBIT™ NOR Flash devices that are compatible with the JEDEC JESD251 eXpanded SPI (xSPI) specification. SEMPER™ Flash is designed for Functional Safety with development according to ISO 26262 standard to achieve ASIL-B compliance and ASIL-D readiness.

Parametrics of S26HS512TGABHI003

Density：512 MBit

Family：HS-T

Interface Bandwidth：400 MByte/s

Interface Frequency：200 MHz

Interfaces：HYPERBUS

Lead Ball Finish：Sn/Ag/Cu

Operating Temperature：-40 °C  - 85 °C

Operating Voltage：1.8 V   1.7 V   2 V

Peak Reflow Temp：260 °C

Feature of S26HS512TGABHI003

Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell

Sector architecture options

Page Programming buffer of 256 or 512 bytes

OTP secure silicon region (SSR) of 1024 bytes (32 × 32 bytes)

HYPERBUS™ interface

SEMPER™ Flash with HYPERBUS™ interface devices support default boot in legacy SPI (x1) or HYPERBUS™interface (x8)

AutoBoot enables immediate access to the memory array following power-on

Hardware reset through CS# signaling method (JEDEC) AND individual RESET# pin

Serial flash discoverable parameters (SFDP) describing device functions and features

Device identification, manufacturer identification and unique identification