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Infineon Technologies has introduced the industry's first 512-Mbit radiation-hardened QSPI NOR flash memory for space and extreme environment applications. Featuring a fast quad-serial peripheral interface (133 MHz) with extremely high density, radiation and single event effect (SEE) performance, this semiconductor device is a fully QML-certified non-volatile memory for use with space-grade FPgas and microprocessors.

The new device was funded by the Air Force Research Laboratory's Space Vehicle Directorate (AFRL) and developed in collaboration with Microelectronics Research Development Corporation (Micro-RDC). It is based on Infineon's proven SONOS (Silicon substrate - tunnelling oxide - charge storage layer Silicon nitride - blocking oxide - polysilicon gate) charge-gate trap technology and operates up to 30% faster than lower-density alternatives.

Richard Marquez, AFRL's Space Electronics Technology program manager, said: "Designers of next-generation space-grade systems have a growing need for highly reliable, high-density memory. "We worked with industry leaders such as Infineon and Micro-RDC to develop a technology solution that combines high density, high data rates and superior radiation performance to alternatives."

Joseph Cuchiaro, President of Micro-RDC, said: "Infineon's radiation-hardened NOR flash is a great complement to Micro-RDC's family of solutions for extreme application environments. With the introduction of 512 Mbit density devices, designers are able to design systems with superior performance to meet the rigors of a wider range of task types than ever before."

Helmut Puchner, vice president of Aerospace & Defense Business at Infineon Technologies, said: "This expansion of the Infineon 512 Mbit NOR flash family into the radiation-hardened memory portfolio is further proof of our commitment to delivering highly reliable, high-performance memory to meet the next generation of space needs." "The collaboration with AFRL and Micro-RDC drives the development of industry-leading technologies to address the extreme environments encountered in space applications by employing technologies that enhance the performance of critical satellite functions."

Infineon's SONOS technology uniquely combines density and speed, as well as advanced radiation performance, with excellent durability up to 10,000 P/E and up to 10 years of data retention. The product's 133 MHz QSPI interface provides high data rates for space-grade FPgas and processors, and is available in a 1 "x 1" ceramic QFP (QML-1) and a smaller 0.5 "x 0.8" plastic TQFP (QML-1) package. In addition, the device provides the highest density TID/SEE performance combination for a space FPGA boot code solution. Its QML-V/P package is DLAM certified and meets the most stringent industry qualification requirements.

Typical use cases for this device include configuration image storage for space-class FPgas and independent startup code storage for space-class multi-core processors. For more information, visit www.infineon.com

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