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In order to meet the requirements of safe hot swap operation in AI servers and telecommunications, the MOSFETs must have robust linear mode of operation and low RDS(on). Infineon Technologies' new OptiMOS 5 Linear FET 2 solves this problem, This MOSFET is designed to achieve the ideal balance between the RDS(on) of a grooved MOSFET and the wide secure Working area (SOA) of a classic planar MOSFET.

The semiconductor device prevents damage to the load by limiting high inrush currents and minimizes losses during operation due to its low RDS(on). Compared to the previous generation OptiMOS Linear FET, the OptiMOS Linear FET 2 improves SOA at high temperatures, reduces gate drain current, and expands the range of package options. This allows each controller to be connected in parallel with more MOSFETs, not only reducing material (BOM) costs, but also bringing greater flexibility to the design by expanding the product portfolio.

The 100 V OptiMOS Linear FEET 2 is available in a TO-leadless package (TOLL). Compared to OptiMOS 5, a standard with a similar RDS(on), the device achieves 12 times higher SOA at 10 ms, 54 V, and 3.5 times higher SOA at 100 μs. The latter improvement is particularly important for battery management systems (BMS) to protect batteries in the event of a short circuit. In the case of short circuit, the key to ensure the design and reliability of the system is the current distribution between the parallel MOSFETs.

OptiMOS 5 Linear FEET 2 improves current distribution by optimizing transmission characteristics. With a wide SOA and improved current shunt, the number of components can be reduced by up to 60% in designs where the number of components is determined by short circuit current requirements. This achieves high power density, high efficiency and highly reliable battery protection, which can be widely used in power tools, electric bicycles, electric motorcycles, forklifts, battery backup power, pure electric vehicles and other fields.

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