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Vishay Intertechnology, Inc. introduces the new 150 V TrenchFET Gen V N-channel power MOSFET-- SiRS5700DP in PowerPAK SO-8S (QFN 6x5) package. Designed to improve efficiency and power density in communications, industrial and computing applications.

The Vishay Siliconix SiRS5700DP has a 68.3 percent reduction in total on-resistance and a 15.4 percent reduction in on-resistance and gate charge product (a key factor of quality (FOM) for MOSFETs in power conversion applications) compared to previous generation devices packaged in PowerPAK SO 8. The RthJC decreased by 62.5 percent, while the continuous drain current increased by 179 percent.

The devices announced today feature industry-leading on-resistance (5.6 m at 10 V) and the product of on-resistance and gate charge FOM (336 m*nC) to minimize power loss due to conduction. As a result, designers are able to increase efficiency and meet the requirements of next-generation power supplies, such as 6 kW AI server power systems. In addition, the PowerPAK SO-8S package features an ultra-low 0.45 °C/W RthJC that enables continuous drain current of up to 144 A, resulting in increased power density while providing powerful SOA capabilities.

The SiRS5700DP is ideal for synchronous rectification, DC/DC conversion, hot swap switches, and OR-ing functions. Typical applications include servers, edge computing, supercomputers, and data storage; Communication power supply; Solar inverter; Motor drives and power tools; And a battery management system. The MOSFETs are RoHS compliant, halogen-free, and 100 percent Rg and UIS tested to IPC-9701 for a more reliable temperature cycle. The device's standard size is 6 mm x 5 mm and is fully compatible with the PowerPAK SO-8 package.

The SiRS5700DP is now available as a sample and in mass production. For more information please visit https://www.vishay.com/,

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