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SK Hynix Announces World's Highest Volume Production of 321-Layer 1Tb TLC 4D NAND Flash Memory
On 21st November, SK Hynix has just announced the start of mass production of the worlds highest 321-layer 1Tb (terabit, not the same as terabyte) TLC (Triple Level Cell) 4D NAND flash memory.The 321-layer product is said to offer a 12% and 13% increa…
On 21st November, SK Hynix has just announced the start of mass production of the world's highest 321-layer 1Tb (terabit, not the same as terabyte) TLC (Triple Level Cell) 4D NAND flash memory.
The 321-layer product is said to offer a 12% and 13% increase in data transfer speed and read performance, respectively, and a more than 10% increase in data read power efficiency compared to the previous generation.
SK Hynix said, ‘After mass-producing the previous generation of 238-layer NAND flash, which is currently the highest, and making it available in the market from June 2023, the company has pushed the boundaries of technology by being the first to introduce NAND flash with more than 300 layers. We plan to respond to market demand by offering 321-layer products to customers from the first half of next year.’
According to the introduction, SK Hynix in this product development process adopted a highly efficient ‘3-Plug’ process technology, to overcome the stacking limitations.
The technology is said to perform the through-hole process in three stages, followed by an optimised follow-up process to electrically connect the three through-holes. In the process of developing low deformation materials, the introduction of through-hole automatic alignment (Alignment) correction technology.
In addition, SK Hynix's technical team also applied the development platform of the previous generation of 238-layer NAND flash memory to 321-layer, thereby minimising process variations and improving productivity by 59% compared to the previous generation.
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