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Infineon introduces the latest generation of GaN power discretes

Infineon introduces the latest generation of GaN power discretes

Source:our siteTime:2024-11-21Views:

Infineon Technologies today announced the launch of a new high-voltage discrete device family, the CoolGaN 650 V G5 transistor, which further enrichis Infineons gallium nitride (GaN) portfolio. The new product family has a wide range of applications, …

Infineon Technologies today announced the launch of a new high-voltage discrete device family, the CoolGaN 650 V G5 transistor, which further enrichis Infineon's gallium nitride (GaN) portfolio. The new product family has a wide range of applications, including USB-C adapters and chargers, consumer and industrial switching power supplies (SMPS) such as lighting, televisions, data centers, telecommunications rectifiers, renewable energy sources, and motor drives in home appliances.

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The latest generation of CoolGaN transistors is a direct replacement for the CoolGaN 600 V G1 transistor, enabling a rapid redesign of existing platforms. The new device improves performance metrics to ensure competitive switching performance for key applications. The CoolGaN 650 V G5 transistor reduces the energy stored in the output capacitance (Eoss) by up to 50 percent, and both drain-source charge (Qoss) and gate charge (Qg) by up to 60 percent compared to its main competitors and Infineon's previous product family. With these features, the new device offers excellent efficiency in both hard and soft switching applications. Compared with traditional semiconductor technology, its power loss is significantly reduced, which can be reduced by 20%-60% depending on the specific use.


These advantages enable this family of devices to operate at high frequencies with very low power consumption, resulting in excellent power density. The CoolGaN 650 V G5 transistor enables SMPS applications to be smaller and lighter, or to increase the output power range when the form factor is specified.


The new high-voltage transistor product family offers multiple RDS(on) package combinations. Ten RDS(on) class products come in various SMD packages, such as ThinPAK 5x6, DFN 8x8, TOLL and TOLT. All products are manufactured on high-performance 8-inch lines in Filach, Austria and Gulin, Malaysia. In the future, CoolGaN will transition to a 12-inch production line. This will allow Infineon to further expand its CoolGaN capacity and ensure a robust supply chain in the GaN power market. Yole Group predicts the market will reach $2 billion by 2029.

For more information, visit www.infineon.com/gan.


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