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November 8, Kioxia announced yesterday that its proposal for ‘Innovative Memory Manufacturing Technology Development’ has been accepted by Japan's New Energy and Industrial Technology Development Organization (NEDO) under its ‘Research and Development Project for Strengthening the Infrastructure of the Post-5G Information and Communication System/Advanced Semiconductor Manufacturing Technology Development’ programme. Manufacturing Technology Development for Post-5G Information and Communication System Infrastructure Research and Development Project/Advanced Semiconductor Manufacturing Technology’ by NEDO.

According to Kioxia, the amount of data generated by factors such as the spread of AI is expected to become extremely large in the post-5G information and communication system era, leading to an increase in data processing and power consumption in data centres. Therefore, the memory used in data centres must be able to transfer data at high speeds between high-performance processors, increasing capacity and reducing power consumption.

Kioxia plans to develop a new type of CXL-interface memory with the goal of creating a new type of memory that consumes less power and has a higher bit density than DRAM memory while providing faster read speeds than NAND flash. This not only improves memory utilisation efficiency, but also contributes to energy savings.

About Kioxia

Kioxia develops, manufactures and sells flash memory (FLASH) and solid state drives (SSD). As a global leader in memory solutions, Kioxia is one of the world's top producers of NAND flash chips, with a global market share second only to Samsung, and in 2012, Kioxia launched the world's first 24-layer BiCS1 3D NAND flash, which has been optimised and developed to 162 layers. In 2012, Kioxia launched the world's first 24-layer BiCS1 3D NAND Flash, and with continuous optimisation and development, it has now successfully developed 162-layer BiCS6 3D NAND Flash, which delivers even more powerful performance for SSDs.