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Shenzhen Mingjiada Electronics Co., Ltd.
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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

Service Telephone:86-755-83294757

Product Classification

Integrated Circuit Chip

Ethernet Instrumentation Amplifiers PCI Express Switches Automotive System-on-Chip Security and Certification IC Equalizer/Driver/Repeater PCI Interface IC PCIe switch Interface-Multiprotocol Transceiver Power Line Transceivers Phase Locked Loop - PLL RF Sampling Transceiver Logic-Level Converter Interface IC - Multi-Rate Retimer SAS Expander Clock/Timing,Oscillators Clock/Timing - Nano Timer Digital Crosspoint Switch Ultrasound Transceivers Clock/Timing - Delay Line Card Reader Controller Logic - Gates and Inverters Transmitter Isolated Comparator

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips Wireless Communication Module

Filter

Band Stop Filters Low Pass Filter Bandpass Filters SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

Wireless Connection

Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

AI Processor Chip

Discrete Semiconductor

Transistor - FET, MOSFET - Single Silicon Diodes Power Modules Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array Transistor - IGBT - Module Transistor - UGBT, MOSFET - Single

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Power over Ethernet (PoE) controller

Connectors

ExtremePort Swift Connectors Multi-Trak™ Connectors VITA 67.3 Connectors SpaceVPX VITA 78 Connectors ExtremePort Z-Link Connectors Displayport Connectors Magnetic Jack Connectors SAS/PCIe 5.0 Connectors SAS/PCIe 4.0 Connectors Mini USB Connectors SFP112G Connectors MiniSAS HD Connectors OSFP-XD Connectors DSFP Connectors CXP Connectors QSFP Connectors OSFP Connectors SFP Connectors CFP2 Connectors Mini Cool Edge IO Connectors SlimSAS™ Connectors Mini-SAS High Density Connectors OCuLink Connectors Wire to Board Connectors

Sensor

Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor Motion sensor - Gyroscope

Memory

NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM AI Memory. F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

AI Accelerators

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SK Hynix Introduces World's First 16-High HBM3E Memory, Expected to Sample Early Next Year

SK Hynix Introduces World's First 16-High HBM3E Memory, Expected to Sample Early Next Year

Source:our siteTime:2024-11-05Views:

SK Hynix CEO Rujung Kuo introduced the worlds first 16-High HBM3E memory at SK AI Summit 2024 in Seoul, South Korea today, 4 November. The product enables a single stack capacity of 48GB and is expected to sample early next year.Although it is general…

SK Hynix CEO Rujung Kuo introduced the world's first 16-High HBM3E memory at SK AI Summit 2024 in Seoul, South Korea today, 4 November. The product enables a single stack capacity of 48GB and is expected to sample early next year.

QQ图片20241105103945.png

Although it is generally believed that 16-layer stacked HBM memory will not be officially commercialised until the next generation of HBM4, referring to an article by Rambus, an IP company in the memory field, HBM3E has the potential to be extended to 16 layers as well.


The paper prepared by SK Hynix for the IEEE ISSCC 2024 conference in February this year also mentioned a 48GB 16-High HBM3E DRAM with a bandwidth of 1280GB/s, and it is likely that the product launched this time will be the corresponding research and development result of the paper.


SK Hynix said that the AI training performance of its 16-High HBM3E is 18% higher than that of its predecessor's 12-High product, and the inference performance is 32% higher; this HBM memory still uses advanced MR-MUF (bulk reflow moulded underfill) bonding technology, and SK Hynix is also developing hybrid bonding with even better performance.


In the DRAM memory segment, SK Hynix said that in addition to the 16-High HBM3E, it is also developing LPCAMM2 based on 1c nm LPDDR5 and LPDDR6, which are aimed at both the PC and data centre markets.


In the NAND flash segment, the company is also preparing PCIe 6.0 SSDs, QLC-based high-capacity enterprise SSDs and next-generation UFS 5.0 flash.

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