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In battery-powered applications such as motor drives and switch-mode power supplies (SMPS), the power supply architecture often requires the ability to disconnect the module from the main power rail in the event of a module failure. In order to achieve this function, MOSFET is often used as a high-side disconnect switch to prevent load short circuits from affecting the battery. Infineon introduces the EiceDRIVER™ 1EDL8011, a high-edge gate driver that protects battery-powered applications in the event of failure, such as cordless power tools, robots, electric bicycles, vacuum cleaners, and more.

The semiconductor device has high gate current capability and can realize fast on-off and off-off of high-side N-channel MOSFETs. It consists of an integrated charge pump and an external capacitor that provides a powerful starting capability. When the operating input voltage is low, the internal charge pump provides the MOSFET gate voltage. The gate driver IC manages inrush current and provides fault protection. Its input voltage Undervoltage lock (UVLO) protection prevents the device from operating under hazardous conditions. The drive comes in a DSO-8 package, ideal for space-constrained designs. It includes overcurrent protection (OCP), adjustable current setting thresholds, time delays, and a secure start mechanism with flexible blanking during MOSFET on-switch.

The 1EDL8011 has A wide operating voltage range of 8 V to 125 V and a grid dip current of up to 1 A for efficient switching. In addition, the product's turn-off mode static current is as low as 1 µA, helping to minimize power consumption in sleep mode. The device also has a VDS sensing function that triggers an overcurrent shutdown by monitoring the drain to source voltage of the disconnected MOSFET.

availability

1EDL8011 is available now. For more information, please visit www.infineon.com/1edl8011.

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