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The H5UG7HME03X020R is the latest high-bandwidth memory for cutting-edge technologies in data centers, supercomputers, and artificial intelligence.

Product: H5UG7HME03X020R

Type: DRAM, DDR5

Density: 16Gb

KGSD density: 128Gb

Speed: 6.0Gbps

Organization: x1024

Voltage: 1.1V

Package: 8Hi

Product Introduction:

SK hynix has consolidated its leadership position in high-speed DRAM with the development of HBM3, the latest high-bandwidth memory for cutting-edge technologies in data centers, supercomputers and artificial intelligence.

Advanced cooling technology:

At the same operating voltage level, the operating temperature of HBM3 is lower than that of HBM2E, which improves the stability of the server system environment. At the same operating temperature, SK hynix HBM3 can support 12 chip stacks, 1.5 times the capacity of the HBM2E, and 1.8 times the bandwidth of the HBM2E at 6Gbps I/O speeds. As a result, SK hynix achieves its Memory ForEST* plan with greater cooling capacity under the same operating conditions.

Performance improvement:

The SK hynix HBM3 has 1.5 times the capacity of the HBM2E and is stacked with 12 DRAM chips with the same total package height, making it suitable for power and capacity-intensive applications such as AI and HPC. A single cube can generate bandwidth of up to 819GB/s, while SiP(system-level package) with six HBM chips on the same chip can achieve bandwidth of up to 4.8TB/s to support exascale requirements.

On-chip ECC:

SK hynix HBM3 also features a powerful custom-designed on-chip ECC(error correction code), which uses pre-assigned parity bits to check and correct errors in the received data. The embedded circuit allows DRAM to self-correct errors within the cell, significantly enhancing the reliability of the device.