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INFINEON FF8MR12W1M1HS4PB11 Silicon Carbide CoolSiC™ MOSFET Half Bridge Module
INFINEON FF8MR12W1M1HS4PB11 Silicon Carbide CoolSiC™ MOSFET Half Bridge ModuleProduct DescriptionFF8MR12W1M1HS4PB11 is EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technol…
INFINEON FF8MR12W1M1HS4PB11 Silicon Carbide CoolSiC™ MOSFET Half Bridge Module
Product Description
FF8MR12W1M1HS4PB11 is EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.
Feature
Best in class with 12.25mm height
Leading edge WBG material
Very low module stray inductance
Enhanced CoolSiC™ MOSFET Gen 1
With enhanced 1 trench technology
Enlarged gate drive voltage window
Voltage window from 15 to 18 & 0 to -5 V
Extended maximum gate-source voltages
Gate-source voltages of +23 V and -10 V
Tvjop: overload condition up to 175°C
Integrated NTC temperature sensor
Benefits
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Thermal conductivity of DCB material
Applications
Energy Storage Systems
EV charging
Fuel-cell DC-DC boost converter
Photovoltaic
Uninterruptible power supplies (UPS)
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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E-mail:sales@hkmjd.com
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