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INFINEON FF8MR12W1M1HS4PB11 Silicon Carbide CoolSiC™ MOSFET Half Bridge Module

INFINEON FF8MR12W1M1HS4PB11 Silicon Carbide CoolSiC™ MOSFET Half Bridge Module

Source:our siteTime:2024-09-28Views:

INFINEON FF8MR12W1M1HS4PB11 Silicon Carbide CoolSiC™ MOSFET Half Bridge ModuleProduct DescriptionFF8MR12W1M1HS4PB11 is EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technol…

INFINEON FF8MR12W1M1HS4PB11 Silicon Carbide CoolSiC™ MOSFET Half Bridge Module


Product Description

FF8MR12W1M1HS4PB11 is EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.


Feature

Best in class with 12.25mm height

Leading edge WBG material

Very low module stray inductance

Enhanced CoolSiC™ MOSFET Gen 1

With enhanced 1 trench technology

Enlarged gate drive voltage window

Voltage window from 15 to 18 & 0 to -5 V

Extended maximum gate-source voltages

Gate-source voltages of +23 V and -10 V

Tvjop: overload condition up to 175°C

Integrated NTC temperature sensor


Benefits

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

Thermal conductivity of DCB material


Applications

Energy Storage Systems

EV charging

Fuel-cell DC-DC boost converter

Photovoltaic

Uninterruptible power supplies (UPS)


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