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QPA0708T GaN Power Amplifier 7.9 to 8.4 GHz 60 W-Qorvo

QPA0708T GaN Power Amplifier 7.9 to 8.4 GHz 60 W-Qorvo

Source:our siteTime:2024-09-28Views:

Product Description:The Qorvo QPA0708T GaN power amplifier is a 60W power amplifier manufactured using Qorvos 0.25m silicon carbon-based gallium nitride process (QGaN25) and mounted on a high thermal conductivity disc. The amplifier operates in the 7.…

Product Description:

The Qorvo QPA0708T GaN power amplifier is a 60W power amplifier manufactured using Qorvo's 0.25µm silicon carbon-based gallium nitride process (QGaN25) and mounted on a high thermal conductivity disc. The amplifier operates in the 7.9GHz to 8.4GHz frequency range and achieves 36dB small signal gain, 32W linear power (with -25dBc intermodulation distortion products), 72W saturated output power, and 49.3% power added efficiency.


In order to simplify system integration, the QPA0708T is fully matched to 50Ω, the RF input port is DC short-circuited, and the RF output port is integrated with a DC blocking capacitor. The QPA0708T bare chip passes 100% on-wafer DC and RF testing to ensure electrical compliance. The Qorvo QPA0708T GaN power amplifier is ideal for supporting satellite communications.


QPA0708T features:

7.9 GHz to 8.4 GHz frequency range

48.6dBm PSAT (PIN =18dBm)

PAE: 49.3% (PIN =18dBm)

Power gain: 30.6dB (PIN =18dBm)

IMD3: -25dBc (42dBm/ pitch)

Small signal gain: 36 dB

Maximum power consumption: 100W

Offset:

- Drain current (IDQ) : 904mA

- Drain voltage (VD) : 26V (typical)

Operating temperature range: -40 °C to +85 °C

Disc size: 6.172mm x 5.817mm x 0.254mm

No lead, no halogen, no antimony, in line with RoHS directive

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Applications:

• Satellite communication


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