sales@hkmjd.com
Service Telephone:86-755-83294757
Product Description:The Qorvo QPA0708T GaN power amplifier is a 60W power amplifier manufactured using Qorvos 0.25m silicon carbon-based gallium nitride process (QGaN25) and mounted on a high thermal conductivity disc. The amplifier operates in the 7.…
Product Description:
The Qorvo QPA0708T GaN power amplifier is a 60W power amplifier manufactured using Qorvo's 0.25µm silicon carbon-based gallium nitride process (QGaN25) and mounted on a high thermal conductivity disc. The amplifier operates in the 7.9GHz to 8.4GHz frequency range and achieves 36dB small signal gain, 32W linear power (with -25dBc intermodulation distortion products), 72W saturated output power, and 49.3% power added efficiency.
In order to simplify system integration, the QPA0708T is fully matched to 50Ω, the RF input port is DC short-circuited, and the RF output port is integrated with a DC blocking capacitor. The QPA0708T bare chip passes 100% on-wafer DC and RF testing to ensure electrical compliance. The Qorvo QPA0708T GaN power amplifier is ideal for supporting satellite communications.
QPA0708T features:
7.9 GHz to 8.4 GHz frequency range
48.6dBm PSAT (PIN =18dBm)
PAE: 49.3% (PIN =18dBm)
Power gain: 30.6dB (PIN =18dBm)
IMD3: -25dBc (42dBm/ pitch)
Small signal gain: 36 dB
Maximum power consumption: 100W
Offset:
- Drain current (IDQ) : 904mA
- Drain voltage (VD) : 26V (typical)
Operating temperature range: -40 °C to +85 °C
Disc size: 6.172mm x 5.817mm x 0.254mm
No lead, no halogen, no antimony, in line with RoHS directive
Applications:
• Satellite communication
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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