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Infineon Showcases GaN and IGBT 7 Devices to Drive Energy Storage and Industrial Applications

Infineon Showcases GaN and IGBT 7 Devices to Drive Energy Storage and Industrial Applications

Source:our siteTime:2024-09-05Views:

August 5th, Infineon presented at the ‘2024 Shenzhen International Power Components, Renewable Energy Management Exhibition (hereinafter referred to as PCIM Asia)’ in Shenzhen from 28th to 30th August, focusing on the brand vision of ‘Digital Low-C…

August 5th, Infineon presented at the ‘2024 Shenzhen International Power Components, Renewable Energy Management Exhibition (hereinafter referred to as PCIM Asia)’ in Shenzhen from 28th to 30th August, focusing on the brand vision of ‘Digital Low-Carbon, Creating the Future! Focusing on the brand vision of ‘Digital Low Carbon, Creating the Future Together’, Infineon displayed a wide portfolio of Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN) power electronics products, in which a number of products and solutions for renewable energies, e-mobility, and smart home applications were presented for the first time. Electronic enthusiasts reporter on-site visit, and share with you what you see on the scene.


At PCIM, Infineon displayed three GaN power device solutions. One is the Thunderbird 280W GaN charger; the other is Infineon's medium-voltage GaN motor drive solution; and the third is the 650V CoolGaN™ bi-directional switch BDS demo.


On-site staff introduced that this Thunderbird 280W fade and charger is powered by Infineon's GaN chip. The GaN charger brings new growth to the laptop gaming market, and Infineon's GaN chip makes the adapter smaller, lighter, more powerful, and more environmentally friendly, with two GS-065-030-2-L GaN transistors used in the adapter.


This year, the humanoid robotics track is a big hit, with the rapid development of humanoid robots, high power density motor drive products are increasingly in demand. Based on the original silicon-based semiconductor switching devices designed by the motor drive, in order to improve the power density programme has a greater challenge, with the help of Infineon introduced a medium voltage GaN motor drive programme, the switching frequency can be increased from 20KHz to 100KHz, which in turn significantly improves the power density. Moreover, the increase in switching frequency helps to improve the performance of the motor and gearbox, thus increasing the system efficiency of the whole machine.


On the scene, Infineon's 650V bi-directional switch (BDS) gallium nitride product drew the attention of journalists. This product is the industry's first bi-directional switching concept device. In applications such as topology, a single CoolGaN™ BDS can achieve the functions that could only be accomplished with four chips before, simplifying the design of customers' traditionally complex circuits with double-sided switches, and dramatically improving performance and optimising costs. The product can be used in applications including motherboards and UPS in servers, OVP and USB-OTG in consumer electronics, and battery management in power tools. This product has a wide range of applications in the smart home and industrial sectors.


At PCIM, Infineon displayed TRENCHSTOP IGBT7 PrimePACK 3+ 1200V half-bridge module, PrimPACK3+ 2300V 1800A IGBT7 module. The staff at the show said that the IGBT7 technology has less switching loss compared to the previous generation of technology, and due to the use of 12-inch wafers for IGBT7, the cost advantage is obvious. As an example, the static loss of the 62mm module series with microtrench technology 1200V TRENCHSTOP™ IGBT7 chips is much lower than that of modules equipped with IGBT4 chipsets. These features significantly reduce losses in applications, especially in industrial motor drives that operate at moderate switching frequencies. Key application scenarios for these products include megawatt-scale centralised photovoltaic inverters and energy storage, uninterruptible power supplies (UPS), general-purpose motor drives, and solid-state circuit breakers for emerging applications.


What's more, for the AI server 54V output platform, Infineon has developed a 3.3kW PSU dedicated demo board, which adopts Infineon's CoolGaN™, CoolSiC™ and CoolMOS™ designs, as well as Infineon's own control chips, such as the XMC series, and other complete solutions, and achieves a complete baseline efficiency of 97.5%, with a power density of up to 96W per in. cu. cu., solving the high power demand of PSUs in data centres.

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