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Infineon introduces the new CoolGaN™ Drive product range

Infineon introduces the new CoolGaN™ Drive product range

Source:our siteTime:2024-08-20Views:

Consumer electronics and industrial applications are showing a diversified trend of portability, electrification, and lightweight. These trends require compact and efficient designs, as well as unconventional PCB designs, which face tight space constr…

Consumer electronics and industrial applications are showing a diversified trend of portability, electrification, and lightweight. These trends require compact and efficient designs, as well as unconventional PCB designs, which face tight space constraints that limit the use of external components. To address these challenges, Infineon Technologies AG (FSE: IFX/OTCQX: IFNNY) has introduced the CoolGaN™ Drive product family, further enriching its gallium nitride (GaN) portfolio. The product family includes CoolGaN™ Drive 650 V G5 single switch (integrates a transistor and gate driver, Available in PQFN 5x6 and PQFN 6x8 packages) and CoolGaN™ Drive HB 650 V G5 devices that integrate two transistors and high - and low-side gate drivers in LGA 6x8 packages. The new product family achieves higher efficiency, smaller system size and lower total cost for longer endurance electric bicycles, portable power tools, and lighter household appliances such as vacuum cleaners, fans and hair dryers.

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Johannes Schoiswohl, Senior Vice President of Infineon Technologies and Head of the GaN Systems Business Line, said: "For many years, Infineon has focused on accelerating innovation in the GaN field to provide targeted solutions to real-world power challenges. The new CoolGaN™ Drive product family once again demonstrates how we can help our customers develop compact designs with high power density and high efficiency through Gans."


The CoolGaN™ Drive product family consists of several single-switch and half-bridge products with integrated drivers, which are based on the recently released CoolGaN™ transistor 650 V G5. Depending on the product group, the series features bootstrap diodes, lossless current measurement, adjustable on/off dV/dt, and OCP/OTP/SCP protection. As a result, these semiconductor devices enable smaller, more efficient high-power density system solutions with higher switching frequencies. At the same time, the Bill of Materials (BoM) was also reduced. This not only reduces the system weight, but also reduces the carbon footprint.


Availability

Samples of half bridge solutions are now available. Single-switch samples will be available from the fourth quarter of 2024. For more information, visit www.infineon.com/GaN-innovations.


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