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CGHV27060MP GaN HEMT-Gallium nitride transistor for LTE and pulse radar applications

CGHV27060MP GaN HEMT-Gallium nitride transistor for LTE and pulse radar applications

Source:our siteTime:2024-08-07Views:

OverviewThe CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) in a small package. Plastic SMT package 4.4 mm x 6.5 mm. A transistor is a wide-band device with no internal input or output matching; This allows flexibi…

Overview

The CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) in a small package. Plastic SMT package 4.4 mm x 6.5 mm. A transistor is a wide-band device with no internal input or output matching; This allows flexibility for a wide frequency range from UHF to 2.7 GHz.

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CGHV27060MP is an excellent transistor for ultra-high frequency pulse applications. L-band or low S-band (< 2.7 GHz). In addition; The transistor is ideal for LTE micro-base station amplifiers with an average power of 10 to 15w in efficient topologies such as Class A/B; The Docherty amplifier. The typical performance of the CGHV27060MP described in the data manual is derived from Class A/B reference designs from 2.5 to 2.7 GHz.


CGHV27060MP specifications

Technology: HEMT

Frequency: 2.7GHz

Gain: 16.5dB

Voltage - Test: 50 V

Rated current (ampere) : 6.3A

Noise figure: -

Current - Test: 125 mA

Power - Output: 80W

Voltage - Rated: 150 V

Mounting type: Surface mount type

Package/housing: 20-TSSOP (0.173", 4.40mm wide)

Supplier device package: 20-TSSOP


Features

From UHF to 2.7GHz

16.5 dB gain under pulse PSAT

The efficiency of pulsed PSAT is 70%

85 W when PSAT is pulsed

18 dB gain when linear PAVE = 14 W

Linear laying = 14 W -35 dBc ACLR

The linear laying efficiency is 33% = 14w

High DPD correction can be applied


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