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Service Telephone:86-755-83294757
Product introductionThe Qorvo QPD2060D 600m discrete GaAs pHEMT (Pseudocrystalline High electron mobility Transistor) operates in the frequency range from DC to 20GHz. Typically, 8 has an output power of 2dBm (at P1dB), a gain of 12dB, and a power add…
Product introduction
The Qorvo QPD2060D 600µm discrete GaAs pHEMT (Pseudocrystalline High electron mobility Transistor) operates in the frequency range from DC to 20GHz. Typically, 8 has an output power of 2dBm (at P1dB), a gain of 12dB, and a power addition efficiency of 55% (at 1dB compression). Thanks to this performance, the QPD2060D is suitable for high efficiency applications.
QPD2060D design uses 0.25µm power pHEMT production process. The process optimizes microwave power and efficiency through advanced technology under high drain bias operating conditions.
QPD2060D GaAs pHEMT adopts 0.41mm x 0.34mm x 0.10mm nude tablet. The device uses a protective layer with silicon nitride to provide environmental robustness and anti-scratch protection.
Product Features
Frequency range: DC to 20GHz
P1dB output power: 28dBm (typical value)
Gain: 12dB (typical at 12GHz)
PAE: 55% (typical at 12GHz)
Noise factor: 1.4dB (typical value at 12GHz)
Drain voltage: 8V
Drain current: 97mA
0.25µm GaAs pHEMT technology
Bare piece size: 0.41mm x 0.34mm x 0.10mm
Halogen-free, lead-free, RoHS compliant
Product Application:
• Communication
• Radar
• Point-to-point radio
• Satellite communication
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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