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DC-20GHz, QPD2060D (Qorvo) Discrete GaAs pHEMT Chip

DC-20GHz, QPD2060D (Qorvo) Discrete GaAs pHEMT Chip

Source:our siteTime:2024-08-05Views:

Product introductionThe Qorvo QPD2060D 600m discrete GaAs pHEMT (Pseudocrystalline High electron mobility Transistor) operates in the frequency range from DC to 20GHz. Typically, 8 has an output power of 2dBm (at P1dB), a gain of 12dB, and a power add…

Product introduction

The Qorvo QPD2060D 600µm discrete GaAs pHEMT (Pseudocrystalline High electron mobility Transistor) operates in the frequency range from DC to 20GHz. Typically, 8 has an output power of 2dBm (at P1dB), a gain of 12dB, and a power addition efficiency of 55% (at 1dB compression). Thanks to this performance, the QPD2060D is suitable for high efficiency applications.

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QPD2060D design uses 0.25µm power pHEMT production process. The process optimizes microwave power and efficiency through advanced technology under high drain bias operating conditions.


QPD2060D GaAs pHEMT adopts 0.41mm x 0.34mm x 0.10mm nude tablet. The device uses a protective layer with silicon nitride to provide environmental robustness and anti-scratch protection.


Product Features

Frequency range: DC to 20GHz

P1dB output power: 28dBm (typical value)

Gain: 12dB (typical at 12GHz)

PAE: 55% (typical at 12GHz)

Noise factor: 1.4dB (typical value at 12GHz)

Drain voltage: 8V

Drain current: 97mA

0.25µm GaAs pHEMT technology

Bare piece size: 0.41mm x 0.34mm x 0.10mm

Halogen-free, lead-free, RoHS compliant


Product Application:

• Communication

• Radar

• Point-to-point radio

• Satellite communication


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