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Shenzhen Mingjiada Electronics Co., Ltd.
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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

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Integrated Circuit Chip

Ethernet Instrumentation Amplifiers PCI Express Switches Automotive System-on-Chip Security and Certification IC Equalizer/Driver/Repeater PCI Interface IC PCIe switch Interface-Multiprotocol Transceiver Power Line Transceivers Phase Locked Loop - PLL RF Sampling Transceiver Logic-Level Converter Interface IC - Multi-Rate Retimer SAS Expander Clock/Timing,Oscillators Clock/Timing - Nano Timer Digital Crosspoint Switch Ultrasound Transceivers Clock/Timing - Delay Line Card Reader Controller Logic - Gates and Inverters Transmitter Isolated Comparator

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips Wireless Communication Module

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Band Stop Filters Low Pass Filter Bandpass Filters SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

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Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

AI Processor Chip

Discrete Semiconductor

Transistor - FET, MOSFET - Single Silicon Diodes Power Modules Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array Transistor - IGBT - Module Transistor - UGBT, MOSFET - Single

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Power over Ethernet (PoE) controller

Connectors

ExtremePort Swift Connectors Multi-Trak™ Connectors VITA 67.3 Connectors SpaceVPX VITA 78 Connectors ExtremePort Z-Link Connectors Displayport Connectors Magnetic Jack Connectors SAS/PCIe 5.0 Connectors SAS/PCIe 4.0 Connectors Mini USB Connectors SFP112G Connectors MiniSAS HD Connectors OSFP-XD Connectors DSFP Connectors CXP Connectors QSFP Connectors OSFP Connectors SFP Connectors CFP2 Connectors Mini Cool Edge IO Connectors SlimSAS™ Connectors Mini-SAS High Density Connectors OCuLink Connectors Wire to Board Connectors

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Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor Motion sensor - Gyroscope

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NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM AI Memory. F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

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ROHM BM3G007MUV-LBE2 650V GaN HEMT gallium nitride transistor

ROHM BM3G007MUV-LBE2 650V GaN HEMT gallium nitride transistor

Source:our siteTime:2024-08-02Views:

The ROHM Semiconductor Nano Cap™ 650V GaN HEMT power level ics are designed for use in demanding electronic systems.Description:The BM3G007MUV-LBE2 device is ideal for a variety of electronic systems requiring high power density and high efficiency. …

The ROHM Semiconductor Nano Cap™ 650V GaN HEMT power level ics are designed for use in demanding electronic systems.

产品图片.jpg

Description:

The BM3G007MUV-LBE2 device is ideal for a variety of electronic systems requiring high power density and high efficiency. By integrating the 650V enhanced GaN HEMT and Si drivers into ROHM's own package, switching speeds of up to 150V/ns can be achieved with significantly reduced parasitic inductance due to PCB routing and lead bonding compared to previous discrete solutions. In addition, its gate drive strength is adjustable, which is very helpful in reducing EMI. The product also has a variety of built-in protection features and other additional features that optimize cost and PCB size. The IC is designed to be universal to existing major controllers, so it can also replace previous discrete power switches such as SJ MOSFETs.


Features:

Nano CAP™ integrated output Optional 5V LDO

Long-term support products for industrial applications

Wide operating range for VDD pin voltage

IN Wide operating range of pin voltage

Low VDD static and operating current

Low propagation delay

High dv/dt noise resistance

Adjustable gate driver strength

Power supply good signal output

VDD UVLO protection

Heat off protection


Application:

Industrial equipment

Power supply and high power density

Efficient demand

Bridge topology such as totem pole PFC

LLC Power supply

adapter


Supply Infineon Power Product:MOSFET Transistor,Si Driver,IGBT Module,Intelligent Power Module Return to
column LAN8840-V/PSA (Microchip) Single-Port Triple-Speed Ethernet Physical Layer Transceiver (PHY)

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