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Amplifier IC QPA0812TR7 (Qorvo) 1 Watt X-Band Power Amplifier

Amplifier IC QPA0812TR7 (Qorvo) 1 Watt X-Band Power Amplifier

Source:our siteTime:2024-07-18Views:

Shenzhen Mingjiada Electronics Co., Ltd.: Supply Amplifier IC QPA0812TR7 (Qorvo) 1 Watt X-Band Power AmplifierQPA0812TR7 - Product Description:QPA0812TR7 is a packaged, high performance power amplifier fabricated on Qorvos production QPHT15 (0.15um) p…

Shenzhen Mingjiada Electronics Co., Ltd.: Supply Amplifier IC QPA0812TR7 (Qorvo) 1 Watt X-Band Power Amplifier


QPA0812TR7 - Product Description:

QPA0812TR7 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides 1 W of saturated output power and 24 dB of large-signal gain while achieving 48% power-added efficiency. Packaged in a small 4 x 3 mm plastic overmold QFN, tight lattice spacing requirements for phased array radar applications is easily supported. RF input and output ports are matched to 50Ω and include integrated DC blocking capacitors.


QPA0812TR7 - Product Attribute:

Drain Voltage (VD): 6.5V

Gate Voltage Range (VG): −5V to 0V

Drain Current (ID): 635mA

Gate Current (IG): 10mA

Power Dissipation (PDISS), CW, TBASE = 85 °C: 1.37W

Input Power (PIN), Pulsed (100us/10%), 50Ω, VD = 6V, TBASE = 85°C: 16 dBm

Input Power (PIN), Pulsed (100us/10%), VSWR 3:1, VD = 6V, TBASE = 85°C: 16 dBm

Mounting Temperature (30 seconds max.): 260°C

Storage Temperature: −55°C to 150°C


QPA0812TR7 - Functional Block Diagram:

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