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Shenzhen Mingjiada Electronics Co., Ltd.: Supply Amplifier IC QPA0812TR7 (Qorvo) 1 Watt X-Band Power AmplifierQPA0812TR7 - Product Description:QPA0812TR7 is a packaged, high performance power amplifier fabricated on Qorvos production QPHT15 (0.15um) p…
Shenzhen Mingjiada Electronics Co., Ltd.: Supply Amplifier IC QPA0812TR7 (Qorvo) 1 Watt X-Band Power Amplifier
QPA0812TR7 - Product Description:
QPA0812TR7 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides 1 W of saturated output power and 24 dB of large-signal gain while achieving 48% power-added efficiency. Packaged in a small 4 x 3 mm plastic overmold QFN, tight lattice spacing requirements for phased array radar applications is easily supported. RF input and output ports are matched to 50Ω and include integrated DC blocking capacitors.
QPA0812TR7 - Product Attribute:
Drain Voltage (VD): 6.5V
Gate Voltage Range (VG): −5V to 0V
Drain Current (ID): 635mA
Gate Current (IG): 10mA
Power Dissipation (PDISS), CW, TBASE = 85 °C: 1.37W
Input Power (PIN), Pulsed (100us/10%), 50Ω, VD = 6V, TBASE = 85°C: 16 dBm
Input Power (PIN), Pulsed (100us/10%), VSWR 3:1, VD = 6V, TBASE = 85°C: 16 dBm
Mounting Temperature (30 seconds max.): 260°C
Storage Temperature: −55°C to 150°C
QPA0812TR7 - Functional Block Diagram:
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Time:2025-07-10
Time:2025-07-10
Time:2025-07-10
Time:2025-07-10
Contact Number:86-755-83294757
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