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NXP A2I20D020NR1 28V Wideband Integrated RF LDMOS Amplifier

NXP A2I20D020NR1 28V Wideband Integrated RF LDMOS Amplifier

Source:our siteTime:2024-07-17Views:

NXP A2I20D020NR1 28V Wideband Integrated RF LDMOS AmplifierProduct Description Of A2I20D020NR1A2I20D020NR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated fo…

NXP A2I20D020NR1 28V Wideband Integrated RF LDMOS Amplifier


Product Description Of A2I20D020NR1

A2I20D020NR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.


Specifications Of A2I20D020NR1

Operating Frequency: 1.4 GHz to 2.2 GHz

Operating Supply Voltage: 20 V to 32 V

Gain: 32 dB

Package/Case: TO-270WB-17

P1dB - Compression Point: 42 dBm

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 150 C

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Supply Voltage - Max: 32 V

Supply Voltage - Min: 20 V

Test Frequency: 1.8 GHz to 2.2 GHz

Unit Weight: 1.580 g


Features Of A2I20D020NR1

Extremely Wide RF Bandwidth

RF Decoupled Drain Pins Reduce Overall Board Space

On-Chip Matching (50 Ohm Input, DC Blocked)

Integrated Quiescent Current Temperature Compensation with Enable/Disable Function


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