sales@hkmjd.com
Service Telephone:86-755-83294757
NXP A2I20D020NR1 28V Wideband Integrated RF LDMOS AmplifierProduct Description Of A2I20D020NR1A2I20D020NR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated fo…
NXP A2I20D020NR1 28V Wideband Integrated RF LDMOS Amplifier
Product Description Of A2I20D020NR1
A2I20D020NR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.
Specifications Of A2I20D020NR1
Operating Frequency: 1.4 GHz to 2.2 GHz
Operating Supply Voltage: 20 V to 32 V
Gain: 32 dB
Package/Case: TO-270WB-17
P1dB - Compression Point: 42 dBm
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Supply Voltage - Max: 32 V
Supply Voltage - Min: 20 V
Test Frequency: 1.8 GHz to 2.2 GHz
Unit Weight: 1.580 g
Features Of A2I20D020NR1
Extremely Wide RF Bandwidth
RF Decoupled Drain Pins Reduce Overall Board Space
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: