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Space applications are an important area for Infineon Technologies AG (FSE: IFX/OTCQX: IFNNY). Infineon's products are used in satellites, Mars rover instruments, space telescopes, etc., where reliability is essential even under extremely harsh conditions. Infineon, the global semiconductor leader in power systems and the Internet of Things, has introduced the industry's first radiation-resistant (rad hard) 1 Mb and 2 Mb parallel interface ferroelectric RAM (F-RAM) non-volatile memory. The memory is a new addition to Infineon's extensive memory portfolio and is characterized by excellent reliability and durability, data retention of up to 120 years at 85 degrees Celsius, and the ability to perform random access and full memory writing at bus speeds.

The inherent radiation resistance of Infineon F-RAM memory makes the technology ideally suited to meet the evolving mission requirements of space applications, which have historically used slower, less robust EEPROM non-volatile memory. Features of Infineon products compared to similar products include: faster memory random access speed; Improve data security by adopting just-in-time non-volatile write technology; Low power consumption, extremely low programming voltage (down to 2V) and 20 mA maximum operating current.

Helmut Puchner, Vice President and Researcher at Infineon Technologies Aerospace & Defense Business, said: "As more and more space applications are designed to process data on the system side rather than transmitting it to the ground for processing via telemetry, there will be an increasing need for highly reliable non-volatile memory to work with space-grade processors and FPgas for data logging applications." Infineon introduced the first SPI F-RAM memory in this market in 2022. This launch of parallel interface memory demonstrates our commitment to providing best-in-class, highly reliable and flexible solutions for the next generation of space needs."

Target applications for Infineon's radiation-resistant F-RAM memory include data storage for sensors and instruments, data logging of calibration data, storage of secure keys for data encryption, and storage of startup codes. In addition to space applications, the memory is also suitable for the temperature requirements of applications such as avionics (-55°C to 125°C).

Like the SPI version, Infineon's new parallel interface F-RAM memory gains excellent non-volatile memory characteristics through its chemical composition, such as replacing the captured charge to program bits in EEPROM technology with an instantaneous switch of atomic states. F-RAM itself is immune to soft errors, magnetic fields, or radiation effects, and requires no software to manage page boundaries. Its near-infinite durability (1013 write cycles) means there is no need for loss equalization.

The parallel memory comes in a 44-lead ceramic TSOP package and is QML-V certified for excellent radiation resistance:

• TID: >150 Krad (silicon)

• SEL: >96 MeV·cm 2/mg @115°C

• SEU: Immunity

• SEFI: <1.34 * 10-4 Daily error/deviation (active/standby)/Immunity (sleep mode)

availability

The radiation-resistant F-RAM non-volatile memory portfolio is now fully available, including 2 Mb SPI memory and 1 Mb and 2 Mb parallel memory. For more information, please visit www.infineon.com/1and2MbFRAM.

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