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Abstract: Infineon's second-generation CoolSiC™ 8-234mΩ 1200VSiCMOSFETs in D²PAK-7L packages offer significantly improved performance for all types of power conversion. The product family includes 11 models with features such as low switching losses, high overload operating temperatures, and resistance to parasitic turn-on.

Infineon's new second-generation CoolSiC™ 8-234mΩ 1200V SiC MOSFET in D²PAK-7L package

The second generation CoolSiC™ G2 1200V MOSFET family in the D²PAK-7L (TO-263-7) package builds on the strengths of the first-generation technology to accelerate cost optimisation of system designs for high efficiency, compact design and reliability.

With significant improvements in key performance metrics for both hard-switching operation and soft-switching topologies, the second-generation products are suitable for all common AC-DC, DC-DC and DC-AC power conversions of all kinds.

Product Features:

Extremely low switching losses

Overload operating temperature up to T vj =200°C

Short-circuit withstand time of 2µs

Benchmark gate threshold voltage, VGS(th) = 4.2V

High parasitic turn-on resistance, 0V gate turn-off available

Ruggedised body diode for hard commutation

.XT interconnect technology for best-in-class thermal performance

Product Advantage:

Lowest R DS(on), Highest Output Capability

Finest product line on the market, 11 models from 8 to 234mΩ

Overload operating temperatures up to T vj =200°C

Robust short circuit ratings

Avalanche robustness

Areas of application:

Electric vehicle charging

String Inverters

On-line UPS / Industrial UPS

General Purpose Drives (GPD)

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