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Infineon (FSE code: IFX/OTCQX code: IFNNY) introduces a new generation of silicon carbide (SiC) MOSFET channel gate technology, opening a new chapter in power systems and energy conversion. Infineon's new CoolSiC™ MOSFET 650 V and 1200 V Generation 2 technologies improve key MOSFET performance metrics, such as energy and charge storage, by 20 percent over previous generation products while ensuring quality and reliability, improving overall energy efficiency. Further promote the process of decarbonization.

CoolSiC™ MOSFET Generation 2 (G2) technology continues to leverage the performance benefits of silicon carbide to improve efficiency in the power conversion process by reducing energy loss. This brings great advantages to customers in power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. Compared to previous generations, electric vehicle DC fast charging stations with CoolSiC™ G2 can reduce power loss by up to 10% and achieve higher charging power without compromising form factor. Traction inverters based on CoolSiC™ G2 devices further increase the range of electric vehicles. In the renewable energy sector, solar inverters with CoolSiC™ G2 can achieve a smaller size while maintaining high power output, resulting in lower cost per watt.

Dr Peter Wawer, President of Infineon's Zero-Carbon Industrial Power Business unit, said: "The big trend is towards new and efficient ways to generate, transmit and consume energy. Infineon takes silicon carbide performance to the next level with CoolSiC™ MOSFET G2. The new generation of silicon carbide technology enables manufacturers to more quickly design systems that are cheaper, more compact, more reliable, and more efficient, saving energy while reducing carbon dioxide emissions per watt on site. This is a testament to Infineon's continued drive for low-carbon and digital innovation in the industrial, consumer and automotive sectors."

Infineon's pioneering CoolSiC™ MOSFET grooved gate technology is driving the development of a high-performance CoolSiC™ G2 solution that enables more optimized design choices with greater efficiency and reliability than current SiC MOSFET technology. Combined with award-winning. With XT packaging technology, Infineon further enhances the potential of CoolSiC™ G2-based designs with higher thermal conductivity, better package control, and improved performance.

With all the key power technologies in silicon, silicon carbide and gallium nitride (GaN), Infineon offers flexible design and leading application knowledge to meet the expectations and demands of modern design. In the drive to decarbonize, innovative semiconductors based on wide band gap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) have become key to efficient energy use.

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