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Infineon Technologies AG announces the launch of the new EDT2 IGBT in the TO247PLUS package. The device is optimized for discrete automotive traction inverters, further enriching Infineon's product lineup of automotive-grade discrete high-voltage devices. Thanks to its outstanding quality, EDT2 IGBTs meet and exceed AECQ101, the automotive-grade semiconductor discrete device stress test standard, thus significantly improving the performance and reliability of inverter systems. The IGBT is designed with an automotive-grade micro-trench field stop cell, and the technology used has been successfully used in various inverter modules such as EasyPACK® 2B EDT2 and HybridPACK®.

In order to meet the requirements of the target application, the new EDT2 IGBT product family from Infineon has excellent short-circuit immunity. In addition, the TO247PLUS package it adopts has a larger creepage distance, which is more conducive to system design. Meanwhile, EDT2 technology is optimized for traction inverters with a breakdown voltage of 750 V, which can support battery voltages up to 470 VDC and significantly reduce switching and conduction losses.

Discrete EDT2 IGBTs are typically rated at 120 A or 200 A when operating at 100°C, both models feature extremely low forward voltage and reduced conduction losses compared to the previous generation 13%. Among them, the AIKQ200N75CP2 with a rated current of 200 A is outstanding among the discrete IGBT products in the TO247Plus package. As a result, only a small number of parallel devices are required to achieve a given target power level, while increasing power density and reducing system cost.

Furthermore, the parameter distribution of the EDT2 IGBT is very tight. The collector-emitter saturation voltage (Vce(sat)) is typically within 200 mV of the maximum value, and the gate threshold voltage (VGEth) is within 750 mV. And the saturation voltage has a positive temperature coefficient. Taken together, these features facilitate easy parallel operation, increasing the system flexibility and power scalability of the final design. In addition, this IGBT device has the advantages of smooth switching characteristics, low gate charge (QG) and a maximum junction temperature (Tvjop) of 175°C.