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Silicon Carbide MOSFET Module 6 N-Channel FS03MR12A6MA1LB, FS03MR12A6MA1LBBPSA1 1200V 400A
Shenzhen Mingjiada Electronics Co., Ltd. supplied and purchased SiC MOSFET modules 6 N-channel FS03MR12A6MA1LB, FS03MR12A6MA1LBBPSA1 1200V 400A 20mW base mount AG-HYBRIDD-2.
Shenzhen Mingjiada Electronics Co., Ltd. supplies and acquires SiC MOSFET modules 6 N-channel FS03MR12A6MA1LB, FS03MR12A6MA1LBBPSA1 1200V 400A
Manufacturer: Infineon Technologies
Manufacturer's product model: FS03MR12A6MA1LB, FS03MR12A6MA1LBBPSA1
Description: POWER MODULE
Detailed Description: MOSFET - Array 6 N-Channel (3 Phase Bridge) 1200V (1.2kV) 400A 20mW Chassis Mount AG-HYBRIDD-2
Parameter
FET Type: 6 N-Channel (3-Phase Bridge)
FET Function: Silicon Carbide (SiC)
Drain-source voltage (Vdss): 1200V (1.2kV)
Current at 25°C - Continuous Drain (Id): 400A
On-resistance (max) at various Id, Vgs: 3.7 milliohms @ 400A, 15V
Vgs(th) (max) at different Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) at Vgs: 1320nC @ 15V
Input Capacitance (Ciss) (Max) at Vds: 42.6nF @ 600V
Power - Maximum: 20mW
Operating temperature: -40°C ~ 150°C (TJ)
Mounting Type: Pedestal Mount
Package/Enclosure: Module
Supplier Device Package: AG-HYBRIDD-2
Potential applications
automotive applications
Hybrid Electric Vehicle (H)EV
motor driven
Commercial agricultural vehicle
main inverter
Specific recycle process:
Company home page: www.hkmjd.com
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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