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Toshiba Electronic Devices & Storage Corporation (Toshiba) announced today the launch of three 650V silicon carbide (SiC) MOSFETs - "TW027U65C", "TW048U65C" and "TW083U65C". These three products are equipped with its latest third-generation SiC MOSFET chips and adopt surface mount TOLL packaging, making them suitable for industrial equipment such as switching power supplies and photovoltaic generator power regulators. Three types of devices are now available for mass shipment starting today.

The three new products are Toshiba's third-generation SiC MOSFETs, which adopt universal surface mount TOLL packages. Compared with through-hole packages such as TO-247 and TO-247-4L(X), they can reduce the device volume by more than 80% and increase the power density of the equipment.

In addition, TOLL packages also have a smaller parasitic impedance than through-hole packages, thereby reducing switching losses. As a 4-pin package, it supports Kelvin connection to the signal source terminals driven by its gate. This reduces the influence of the source line inductance inside the package, achieving high-speed switching performance. In the casing of TW048U65C, compared with Toshiba 's existing products], its turn-on loss is reduced by approximately 55% and the turn-off loss is reduced by approximately 25%, which helps to lower the power consumption of the equipment.

In the future, Toshiba will continue to expand its SiC power device product line, contributing to improving equipment efficiency and increasing power capacity.

Application

Switching power supplies in servers, data centers, communication equipment, etc

Electric vehicle charging stations

- Photovoltaic inverter

Uninterruptible power supply

Feature

- Surface mount TOLL packaging enables device miniaturization and automated assembly, with low switching loss

-Toshiba 3rd generation SiC MOSFET

By optimizing the ratio of drift resistance to channel resistance, a good temperature dependence of drain-source on-resistance is achieved

· Low drain-source on-resistance × gate leakage charge

· Low diode forward voltage: VDSF = -1.35V (typical value) (VGS = -5V)

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