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N-channel BSC052N08NS5 OptiMOS™ 5 80V Power MOSFET for Telecommunications Applications
Shenzhen Mingjiada Electronics Co., Ltd. offers the Infineon N-channel power MOSFET BSC052N08NS5 OptiMOS™ 5 80V power MOSFET in stock, suitable for telecommunications applications such as server power supplies and communication equipment.Product Desc…
Shenzhen Mingjiada Electronics Co., Ltd. offers the Infineon N-channel power MOSFET BSC052N08NS5 OptiMOS™ 5 80V power MOSFET in stock, suitable for telecommunications applications such as server power supplies and communication equipment.
Product Description
The BSC052N08NS5 is part of Infineon's OptiMOS™ 5 series and is packaged in a PG-TDSON-8 package. The device has a maximum drain-source voltage (VDS) of 80V, a maximum on-resistance (RDS(on)) of 5.2 milliohms, and can handle a maximum continuous drain current (ID) of 95A. Its optimised switching performance helps reduce switching and conduction losses, thereby reducing the need for parallel connections and improving power density.
Product Features
High-efficiency power conversion: Designed for high-efficiency power conversion, suitable for various application scenarios.
Low on-resistance: Maximum RDS(on) of 5.2 milliohms helps reduce conduction losses.
High current-carrying capacity: Maximum ID of 95A meets the requirements of high-power applications.
Optimised packaging: Uses SuperSO8 packaging with dimensions of 5x6mm, suitable for compact designs.
Wide Operating Temperature Range: Operating temperature range from -55°C to +150°C, suitable for various environmental conditions.
Core advantages
High efficiency and energy savings: Compared to the previous generation, RDS(on) is reduced by 43%, significantly improving power density.
High current carrying capacity: 95A continuous current and 380A pulse current, suitable for high-power applications.
Fast switching: Rise/fall time of only 7ns/5ns, reducing switching losses.
Wide temperature operating range: -55°C to +150°C, suitable for harsh environments.
Low gate charge (Qg = 32nC) reduces drive losses
Product Attributes
Manufacturer: Infineon Technologies
Model: BSC052N08NS5
Year: 24+
Series: OptiMOS™
Part Status: In Stock
FET Type: N-channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 80 V
Current at 25°C - Continuous Drain (Id): 95A (Tc)
Drive Voltage (Maximum Rds On, Minimum Rds On): 6V, 10V
On-Resistance at Different Id and Vgs (Maximum): 5.2 mΩ @ 47.5A, 10V
Vgs(th) at Different Id (Maximum): 3.8V @ 49µA
Gate Charge (Qg) at Different Vgs (Maximum): 40 nC @ 10 V
Vgs (maximum): ±20V
Input capacitance (Ciss) at different Vds (maximum): 2900 pF @ 40 V
Power dissipation (maximum): 2.5W (Ta), 83W (Tc)
Operating temperature: -55°C to 150°C (TJ)
Package: PG-TDSON-8
Typical Applications
Telecom base station power supplies
Server/data centre power supplies
Solar inverters
Light electric vehicle (LEV) motor drives
Industrial automation control
Mingjiada Electronics Contact Information
Phone: +86 13410018555 (Mr. Chen)
Email: sales@hkmjd.com
Website: www.hkmjd.com
Mingjiada Electronics offers genuine products, fast delivery, and professional technical support. Please feel free to contact us for inquiries and purchases!
Time:2025-08-08
Time:2025-08-08
Time:2025-08-08
Time:2025-08-08
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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