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N-channel BSC052N08NS5 OptiMOS™ 5 80V Power MOSFET for Telecommunications Applications

N-channel BSC052N08NS5 OptiMOS™ 5 80V Power MOSFET for Telecommunications Applications

Source:our siteTime:2025-08-08Views:

Shenzhen Mingjiada Electronics Co., Ltd. offers the Infineon N-channel power MOSFET BSC052N08NS5 OptiMOS™ 5 80V power MOSFET in stock, suitable for telecommunications applications such as server power supplies and communication equipment.Product Desc…

Shenzhen Mingjiada Electronics Co., Ltd. offers the Infineon N-channel power MOSFET BSC052N08NS5 OptiMOS™ 5 80V power MOSFET in stock, suitable for telecommunications applications such as server power supplies and communication equipment.


Product Description

The BSC052N08NS5 is part of Infineon's OptiMOS™ 5 series and is packaged in a PG-TDSON-8 package. The device has a maximum drain-source voltage (VDS) of 80V, a maximum on-resistance (RDS(on)) of 5.2 milliohms, and can handle a maximum continuous drain current (ID) of 95A. Its optimised switching performance helps reduce switching and conduction losses, thereby reducing the need for parallel connections and improving power density.


Product Features  

High-efficiency power conversion: Designed for high-efficiency power conversion, suitable for various application scenarios.  

Low on-resistance: Maximum RDS(on) of 5.2 milliohms helps reduce conduction losses.  

High current-carrying capacity: Maximum ID of 95A meets the requirements of high-power applications.  

Optimised packaging: Uses SuperSO8 packaging with dimensions of 5x6mm, suitable for compact designs.

Wide Operating Temperature Range: Operating temperature range from -55°C to +150°C, suitable for various environmental conditions.


Core advantages  

High efficiency and energy savings: Compared to the previous generation, RDS(on) is reduced by 43%, significantly improving power density.  

High current carrying capacity: 95A continuous current and 380A pulse current, suitable for high-power applications.  

Fast switching: Rise/fall time of only 7ns/5ns, reducing switching losses.  

Wide temperature operating range: -55°C to +150°C, suitable for harsh environments.

Low gate charge (Qg = 32nC) reduces drive losses


Product Attributes

Manufacturer: Infineon Technologies  

Model: BSC052N08NS5

Year: 24+

Series: OptiMOS™  

Part Status: In Stock  

FET Type: N-channel  

Technology: MOSFET (Metal Oxide)  

Drain-Source Voltage (Vdss): 80 V  

Current at 25°C - Continuous Drain (Id): 95A (Tc)  

Drive Voltage (Maximum Rds On, Minimum Rds On): 6V, 10V   

On-Resistance at Different Id and Vgs (Maximum): 5.2 mΩ @ 47.5A, 10V  

Vgs(th) at Different Id (Maximum): 3.8V @ 49µA  

Gate Charge (Qg) at Different Vgs (Maximum): 40 nC @ 10 V  

Vgs (maximum): ±20V  

Input capacitance (Ciss) at different Vds (maximum): 2900 pF @ 40 V  

Power dissipation (maximum): 2.5W (Ta), 83W (Tc)  

Operating temperature: -55°C to 150°C (TJ)  

Package: PG-TDSON-8  


Typical Applications  

Telecom base station power supplies  

Server/data centre power supplies  

Solar inverters  

Light electric vehicle (LEV) motor drives  

Industrial automation control  


Mingjiada Electronics Contact Information  

Phone: +86 13410018555 (Mr. Chen)  

Email: sales@hkmjd.com  

Website: www.hkmjd.com


Mingjiada Electronics offers genuine products, fast delivery, and professional technical support. Please feel free to contact us for inquiries and purchases!

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