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On 28 July 2025, Kioxia, a global leader in storage solutions, announced that its 512Gb TLC memory using ninth-generation BiCS FLASH™ 3D flash memory technology has begun sampling (1). The product is scheduled to enter mass production in 2025, aiming to provide solutions with both outstanding performance and energy efficiency for the mid-to-low capacity storage market. Additionally, this product will be integrated into Kioxia's enterprise-grade solid-state drives, particularly for applications requiring enhanced GPU performance in AI systems.

To address the diverse needs of cutting-edge application markets while delivering cost-effective and competitive products, Kioxia will continue to pursue a ‘dual-track’ strategy:

9th Generation BiCS FLASH™ Products: Utilising CBA (CMOS directly Bonded to Array) technology (2), which combines existing storage cell technology (3) with the latest CMOS technology, to achieve exceptional performance while reducing production costs.  

10th Generation BiCS FLASH™ Products: By increasing the number of stacked layers in storage cells, to meet future market demands for higher capacity and higher performance solutions.

The new 9th-generation BiCS FLASH™ 512Gb TLC is developed based on the 120-layer stacking process of the 5th-generation BiCS FLASH™ technology and advanced CMOS technology. Compared to Kioxia's existing BiCS FLASH™ products of the same capacity (512Gb) (4), its performance has been significantly improved, including:

Write performance: Improved by 61%

Read performance: 12% improvement  

Energy efficiency: 36% improvement in write operation energy efficiency and 27% improvement in read operation energy efficiency  

Data transfer speed: Supports Toggle DDR6.0 interface, enabling up to 3.6Gb/s NAND interface transfer rate  

Bit density: 8% improvement in bit density through advanced lateral scaling technology

Additionally, Kioxia has confirmed that under demonstration conditions, the NAND interface speed of this 512Gb TLC can reach 4.8Gb/s. Its product line will be determined based on market demand.

Kioxia remains committed to deepening global partnerships and driving technological innovation to provide customers with the best storage solutions tailored to their diverse needs.

(1) These samples are for functional testing only, and sample specifications may vary from mass-produced components.

(2) CBA (CMOS directly Bonded to Array) technology refers to a process where CMOS wafers and cell storage array wafers are manufactured separately under optimal conditions and then bonded together.

(3) The fifth-generation BiCS FLASH™ technology with 112-layer stacking and the eighth-generation BiCS FLASH™ technology with 218-layer stacking. The new ninth-generation BiCS FLASH™ products will integrate one of these two technologies depending on the model.

(4) The sixth-generation BiCS FLASH™ will continue to use this 512Gb TLC product.

(5) 1 Gbps is calculated as 1,000,000,000 bits/s. This value was obtained in Kioxia Corporation's specific test environment and may vary depending on the user's environment.