Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

Supply Infineon GaN Product:GaN Bidirectional Switch,GaN Controller,GaN Smart,GaN Transistor

Shenzhen Mingjiada Electronics Co., Ltd., as a leading electronic component supplier in China, leverages its robust supply chain network and professional industry service capabilities to provide customers with stable and reliable original products.

Main products include: 5G chips, new energy ICs, IoT ICs, Bluetooth ICs, vehicle networking ICs, automotive-grade ICs, communication ICs, artificial intelligence ICs, memory ICs, sensor ICs, microcontroller ICs, transceiver ICs, Ethernet ICs, WiFi chips, wireless communication modules, connectors, and other electronic components.

The company has the following core advantages in supply:

Direct supply from original manufacturers and quality assurance: All products are procured through authorised channels to ensure 100% genuine original products, with complete original manufacturer batch numbers provided.

Scalable procurement and cost optimisation: Through deep cooperation with multiple well-known brands and the advantage of large-scale procurement, the company can significantly reduce the overall cost of electronic components, offering customers highly competitive prices.

Flexible and rapid delivery capabilities: The Shenzhen central warehouse and Hong Kong bonded warehouse operate in tandem, supporting 48-hour express delivery, with urgent orders capable of domestic shipment within 24 hours.

Gallium Nitride (GaN)

CoolGaN™ – Discrete devices and integrated solutions delivering the highest efficiency and power density for consumer electronics, industrial, and automotive applications.

Infineon GaN Bidirectional Switch Products and Applications

The bidirectional switches (BDS) in Infineon's CoolGaN™ series represent a significant innovation direction for GaN technology in power conversion applications. Infineon's 40V bidirectional switch devices are manufactured using advanced GaN-on-Si process technology, integrating two high-performance GaN HEMTs (high electron mobility transistors) to enable bidirectional current control within a single package, significantly simplifying circuit design and enhancing system reliability. These devices feature extremely low on-resistance (typical values of 1.1mΩ to 2.3mΩ) and ultra-fast switching speeds, supporting operating frequencies up to 2MHz—5 to 10 times the performance of traditional silicon-based MOSFETs—making them particularly suitable for applications requiring high-frequency, high-efficiency operation.

The core technological advantage of GaN bidirectional switches lies in their absence of body diode reverse recovery characteristics. Unlike silicon-based devices, GaN devices do not generate reverse recovery current during reverse conduction, fundamentally eliminating the switching losses and EMI issues caused by the body diode reverse recovery in traditional MOSFETs. Infineon's CoolGaN™ bidirectional switches also employ innovative gate drive technology to ensure device stability and reliability under high-frequency switching conditions while simplifying drive circuit design. These features enable GaN bidirectional switches to perform exceptionally well in applications requiring bidirectional energy flow, such as synchronous rectification, motor drive H-bridges, and wireless charging.

Infineon GaN Controllers and Smart Device Solutions

Infineon's GaN controller product line includes standalone gate drivers and highly integrated intelligent power modules (IPMs), which are optimised for the unique characteristics of GaN power devices to fully leverage the high-frequency, high-efficiency advantages of GaN technology. Notably, intelligent power ICs like the NV6133A, which integrate GaN switches and drivers, utilise GaNSense™ technology to enable lossless current sensing and comprehensive protection functions, significantly simplifying system design and enhancing reliability.

The GaNFast™ power IC is the flagship series in Infineon's GaN controller product line. The NV6133A chip integrates high-performance GaN switches and drivers, supports a wide VCC range of 10 to 30V, offers programmable turn-on dV/dt, and provides 200V/ns dV/dt immunity. The device features an 800V transient voltage rating and a 700V continuous voltage rating, with a on-resistance of just 330mΩ and support for operating frequencies up to 2MHz. Its integrated GaNSense™ technology provides intelligent features such as short-circuit protection, over-temperature protection, and an autonomous low-current standby mode, eliminating power losses from sampling resistors in traditional designs and further improving system efficiency and reliability.

Infineon's GaN transistor series

Infineon's GaN transistor product line covers a wide range of application requirements from medium to high voltage, including the full series of GaN transistors such as CoolGaN™ G3 (medium voltage), CoolGaN™ G5 (high voltage), and the industrial IGT series. These devices are manufactured using advanced 8-inch wafer processes, significantly enhancing power density, switching frequency, and thermal management performance, making them suitable for cutting-edge applications from consumer electronics to industrial power supplies.

The CoolGaN™ G3 series is optimised for medium-voltage applications, with a voltage range from 40V to 120V. It uses standardised RQFN 5x6 and 3.3x3.3 packages, which are compatible with traditional silicon-based MOSFET pins, facilitating design migration for customers. These devices feature extremely low on-resistance (1.1mΩ to 2.3mΩ) and excellent thermal cycling stability, making them particularly suitable for high-frequency switching applications. In USB-C fast charging designs, the G3 series GaN transistors achieve efficiency of over 95% while reducing power supply size by over 50%; in motor drives and telecom power supplies, their high-frequency characteristics help reduce filter component size and enhance control bandwidth.

The CoolGaN™ G5 series is Infineon's flagship product for high-voltage applications, operating at voltages up to 650V. It employs innovative GIT (Gate Injection Transistor) technology, achieving a 3% to 5% efficiency improvement over previous generations. The G5 series GaN transistors feature extremely low switching losses, supporting operating frequencies from hundreds of kHz to MHz, while offering excellent dv/dt immunity and short-circuit withstand capability. In photovoltaic inverter applications, G5 devices achieve conversion efficiencies exceeding 99%, significantly enhancing the energy output of power generation systems. In server power supplies and electric vehicle on-board chargers (OBCs), their high power density enables more compact system designs.