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With the explosive growth in AI computing power demand, data centre power supply systems are facing unprecedented challenges. In May 2025, Navitas Semiconductor announced the launch of its latest 12kW production-ready power supply reference design, specifically designed for hyperscale AI data centres, capable of supporting high-power server racks with power densities up to 120kW.

What sets this product apart is that the 12kW power supply adheres to the ORv3 specification and Open Compute Project (OCP) standards, utilises third-generation fast silicon carbide MOSFETs and new IntelliWeave digital technology, and incorporates high-power GaNSafe gallium nitride power chips in a three-phase interleaved TP-PFC and FB-LLC topology, achieving the highest efficiency and performance with a minimalist component layout.

In terms of key technology, the three-phase interleaved TP-PFC topology in the Navitas 12kW power supply is driven by third-generation fast silicon carbide MOSFETs using ‘trench-assisted planar gate’ technology. The three-phase interleaved FB-LLC topology is driven by Navitas Semiconductor's high-power flagship—the fourth-generation GaNSafe gallium nitride power chips—which integrate control, drive, sensing, and critical protection functions, enabling unprecedented reliability and robustness in high-power applications.

The power supply measures 790×73.5×40mm, with an input voltage range of 180–305VAC and a maximum output voltage of 50VDC. When the input voltage exceeds 207 VAC, it outputs 12 kW of power; below this threshold, it outputs 10 kW. It features active current sharing functionality and protection mechanisms against overcurrent, overvoltage, undervoltage, and overheating, enabling normal operation within a temperature range of -5 to 45°C. Under a 12 kW load, it maintains operation for up to 20 ms, with surge current reaching three times the steady-state current (duration < 20 ms), and employs internal fan cooling.

NVIDIA's next-generation 800V HVDC architecture is designed to provide efficient, scalable power transmission capabilities for future AI computing workloads, achieving higher reliability, better efficiency, and simplified infrastructure design. NVIDIA developed its next-generation 800V HVDC architecture using Navitas Semiconductor's GaNFast gallium nitride and GeneSiC silicon carbide technologies.

In the secondary-side DC-DC conversion field, Navitas Semiconductor has launched medium-voltage GaN power devices operating at 80-120V, specifically optimised for AI data centre power supplies with output voltages of 48V-54V, enabling high-speed, efficient, and space-saving power conversion.

Future Outlook

NanoMicro plans to launch higher-power solutions by 2026 and collaborate with NVIDIA to advance the 800V HVDC architecture, further optimising energy efficiency in AI data centres.

The launch of this 12kW power supply marks the formal adoption of GaN+SiC hybrid design as the core technology for next-generation AI power supply, providing efficient and reliable power support for global computing infrastructure.