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ADI HMC517LC4TR High Dynamic Range GaAs pHEMT MMIC Low Noise Amplifier

Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned distributor of electronic components, has been supplying ADI's HMC517LC4TR high dynamic range gallium arsenide pHEMT MMIC low noise amplifier for an extended period. This high-performance RF device demonstrates exceptional electrical characteristics within the 17-26 GHz frequency band and is widely applied in high-end fields such as point-to-point radio, VSAT systems, and test equipment.

HMC517LC4TR Product Overview and Technical Specifications:

The HMC517LC4TR is a high dynamic range gallium arsenide pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low noise amplifier. The product is packaged using lead-free surface mount technology (SMT) compliant with RoHS standards, operating at frequencies from 17 GHz to 26 GHz, and belongs to the Ka-band microwave device category. It holds significant application value in satellite communications, 5G millimetre-wave, and radar systems.

In terms of packaging, the HMC517LC4TR adopts an LGA-24 package with dimensions of 4x4 millimetres, aligning with the modern trend towards miniaturisation and high integration in electronic device design. This packaging not only offers excellent thermal performance for efficient heat management but is also compatible with high-volume surface mount manufacturing technology, significantly simplifying the production process.

The main technical parameters of the HMC517LC4TR include:

Operating frequency range: 17 GHz to 26 GHz, covering the Ka band

Small-signal gain: 19 dB (typical), providing stable signal amplification capability

Noise figure: 2.5 dB, outperforming similar products

Output third-order intercept point (OIP3): +23 dBm, demonstrating excellent linear performance

1dB compression point output power (P1dB): +13dBm, ensuring sufficient output power margin

Operating voltage: single +3V power supply, simplifying system power design

Operating current: 67mA, with reasonable power consumption control

A significant design advantage of the HMC517LC4TR is its fully integrated 50-ohm matching network, meaning engineers do not need to design complex impedance matching circuits or use external components when applying this device, greatly simplifying the RF system design process, reducing development complexity, and lowering BOM costs. Both input and output ports use standard 50Ω design, further facilitating system integration.

Performance Features and Design Advantages of the HMC517LC4TR:

As a gallium arsenide pHEMT-based MMIC low-noise amplifier, the HMC517LC4TR offers multiple advantages in terms of RF performance, integration, and reliability, making it an ideal choice for high-frequency applications.

Wideband performance is one of the amplifier's standout features. The continuous operating frequency band from 17GHz to 26GHz covers the critical RF frequency bands of the Ka band. This wideband capability allows a single device to meet the needs of multiple applications, significantly reducing the complexity of frequency band switching in system design while also lowering material management and inventory costs.

In terms of noise performance, the HMC517LC4TR offers a noise figure of 2.5dB, which is extremely low for a Ka band amplifier. Its low-noise characteristics make it particularly suitable for use as the first-stage amplifier in a receiver front end, maximising system noise figure reduction and enhancing receiver sensitivity. Compared to traditional silicon-based amplifiers, this device, based on gallium arsenide pHEMT technology, offers significant advantages in noise performance, frequency characteristics, and temperature stability.

High linearity is another key feature of the HMC517LC4TR. With an output third-order intercept point (OIP3) of +23dBm and a 1dB compression point output power of +13dBm, it can handle high dynamic range signals without introducing noticeable intermodulation distortion. This makes it suitable not only as a low-noise amplifier but also as a local oscillator (LO) driver for balanced, I/Q, or image-suppressed mixers.

In terms of system integration convenience, the fully integrated 50-ohm input/output matching eliminates the need for external matching network design, while the surface-mount package (SMT) is fully compatible with modern PCB assembly processes. These features collectively make the device a ‘plug-and-play’ RF solution, significantly reducing product development cycles.

From a reliability perspective, the gallium arsenide pHEMT technology inherently offers high-temperature operation capability and excellent radiation resistance, combined with ADI's rigorous quality control system, ensuring stable operation of the HMC517LC4TR in harsh environments.

Typical application areas for the HMC517LC4TR:

Point-to-point radio communication is one of the primary application scenarios for this amplifier. In microwave link systems, the HMC517LC4TR is commonly used as an RF front-end low-noise amplifier. Its wide bandwidth characteristics are particularly suitable for microwave communication systems operating across multiple frequency bands, while its low noise figure ensures high system receive sensitivity. A gain of 19 dB effectively compensates for transmission path losses, enhancing the system's overall signal-to-noise ratio.

Satellite communication systems, particularly VSAT (Very Small Aperture Terminal) equipment, are another important application area for this amplifier. In Ka-band (26.5–40 GHz) satellite communications, the HMC517LC4TR can serve as a low-noise amplifier stage before the downconverter. Its stable performance and compact packaging are particularly suitable for space-constrained VSAT terminal equipment. A noise figure of 2.5 dB is particularly important for satellite reception systems, as it directly affects the overall link's G/T value (figure of merit).

Test and measurement equipment continues to have a steady demand for the HMC517LC4TR. In instruments such as microwave signal sources and spectrum analysers, the amplifier can serve as a signal conditioning module, providing the necessary gain and low-noise characteristics. The wide bandwidth coverage of 17–26 GHz reduces the number of amplifiers required in test systems, simplifying instrument design.

Military electronic systems are also an important market for the HMC517LC4TR. In electronic warfare (EW) and electronic countermeasure (ECM) equipment, the amplifier can be used in the receiver front end or interference signal generation chain. Its wide bandwidth enables coverage of multiple threat frequencies, while the inherent radiation resistance of gallium arsenide (GaAs) technology enhances reliability in harsh electromagnetic environments.

Additionally, the HMC517LC4TR is highly suitable for use as a local oscillator (LO) driver for mixers. In superheterodyne receiver architectures, driving the mixer's LO port requires sufficient power to ensure good conversion efficiency, while also demanding low phase noise to avoid degrading system noise performance. The amplifier's high linearity and moderate power level make it an ideal choice for LO driving.

5G millimetre-wave communication is a potential emerging application area for the HMC517LC4TR. As 5G expands to higher frequency bands, the 24GHz to 40GHz band will be used for 5G millimetre-wave communication. The HMC517LC4TR's 17-26GHz operating range can support the intermediate frequency processing section of these systems.