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Renesas Launches New GaN FET Series to Enhance High-Density Power Conversion Capabilities

Renesas Launches New GaN FET Series to Enhance High-Density Power Conversion Capabilities

Source:our siteTime:2025-07-03Views:

Renesas Electronics today announced the launch of three new high-voltage 650V GaN FETs—TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—suitable for artificial intelligence (AI) data centres and server power supplies (including new 800V high-voltage …

Renesas Electronics today announced the launch of three new high-voltage 650V GaN FETs—TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—suitable for artificial intelligence (AI) data centres and server power supplies (including new 800V high-voltage DC architectures), electric vehicle charging, uninterruptible power supply battery backup equipment, battery energy storage, and solar inverters. These fourth-generation enhanced (Gen IV Plus) products are specifically designed for multi-kilowatt applications, combining efficient GaN technology with silicon-compatible gate drive inputs to significantly reduce switching power losses while maintaining the ease of operation of silicon-based FETs. The new products offer three packaging options—TOLT, TO-247, and TOLL—enabling engineers to flexibly customise thermal management and PCB designs for specific power architectures.

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These three new products are built on the robust and reliable SuperGaN® platform. This platform employs a proven depletion-mode (d-mode) constant-off architecture, pioneered by Transphorm (acquired by Renesas in June 2024). Compared to silicon-based, silicon carbide (SiC), and other GaN products, products based on low-loss depletion-mode technology offer higher efficiency. Additionally, they minimise power loss through lower gate charge, output capacitance, cross-talk, and dynamic resistance, and feature a higher 4V threshold voltage—a performance level currently unattainable by enhancement-mode (e-mode) GaN products.


The new Gen IV Plus products are 14% smaller in die size than the previous-generation Gen IV platform, enabling a lower on-resistance (RDS(on)) of 30 milliohms (mΩ), a 14% reduction from the previous generation, and a 20% improvement in the figure of merit (FOM) metric of on-resistance times output capacitance. The smaller die size helps reduce system costs, minimise output capacitance, and thereby enhance efficiency and power density. These advantages make Gen IV Plus products an ideal choice for cost-sensitive applications with high thermal management requirements, particularly in scenarios demanding high performance, efficiency, and compact size. They are fully compatible with existing designs, facilitating upgrades while protecting existing engineering investments.


These products are available in compact TOLT, TO-247, and TOLL packages, offering a wide range of packaging options for power systems from 1 kW to 10 kW, meeting thermal performance and layout optimisation requirements, and enabling the parallel connection of higher-power power systems. The new surface-mount packages include bottom heat dissipation paths (TOLL) and top heat dissipation paths (TOLT), which help reduce case temperatures and facilitate device parallel operation when higher conduction currents are required. Additionally, the commonly used TO-247 package provides customers with higher thermal capacity to achieve higher power levels.


Primit Parikh, Vice President of the GaN Business Division at Renesas, stated, "The successful launch of Gen IV Plus GaN products marks a milestone for Renesas in the GaN technology field following the completion of the acquisition of Transphorm last year. Going forward, we will deeply integrate market-proven SuperGaN technology with Renesas' extensive portfolio of drivers and controllers to develop comprehensive power solutions. These products can not only be used as standalone FETs but can also be integrated with Renesas controllers or driver products into complete system solution designs. This innovative combination will provide designers with product design solutions featuring higher power density, smaller size, higher efficiency, and lower total system costs."


Unique depletion-mode constant-off design for reliability and ease of integration


Like previous depletion-mode GaN products, Renesas' new GaN products feature a unique configuration with integrated low-voltage silicon-based MOSFETs, enabling seamless constant-off operation while fully leveraging the advantages of high-voltage GaN in terms of low loss and high-efficiency switching. Since the input stage uses silicon-based FETs, SuperGaN FETs can be driven using standard off-the-shelf gate drivers, eliminating the need for the dedicated drivers typically required for enhancement-mode GaN. This compatibility simplifies the design process and lowers the barrier for system developers to adopt GaN technology.


To meet the stringent requirements of applications such as electric vehicles (EVs), inverters, AI data centre servers, renewable energy, and industrial power conversion, GaN-based switching products are rapidly emerging as a key technology for next-generation power semiconductors. Compared to SiC and silicon-based semiconductor switching products, they offer higher efficiency, higher switching frequencies, and smaller sizes.


Renesas holds a unique advantage in the GaN market, offering a comprehensive range of GaN FET solutions covering both high-power and low-power applications, in stark contrast to many other vendors that have only achieved success in the low-power segment. This extensive product portfolio enables Renesas to address a broader range of application requirements and customer segments. To date, Renesas has shipped over 20 million GaN devices for both high-power and low-power applications, with cumulative field operation time exceeding 3 billion hours.


Availability

TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS, as well as the 4.2kW totem pole PFC GaN evaluation platform (RTDTTP4200W066A-KIT), are now available.


Experience Renesas Power

Driven by innovation, quality, and reliability, Renesas leads the power electronics industry with annual shipments exceeding 4 billion components. Its product portfolio includes power management ICs, discrete and wide-bandgap GaN products, and computing power devices. These products serve all major markets, including automotive, IoT, infrastructure, and industrial applications. Renesas' power product portfolio seamlessly integrates with its leading MCUs, MPUs, SoCs, and analog solutions. Leveraging hundreds of engineering-validated ‘Winning Combinations’ and innovative design tools such as PowerCompass™ and PowerNavigator™, Renesas significantly simplifies and accelerates customer design processes.

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