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Infineon introduces new generation of energy-efficient IGBT and RC-IGBT chips for electric vehicles
With the rapid growth in sales of pure electric vehicles (BEV) and plug-in hybrid electric vehicles (PHEV), the development of the electric vehicle market is constantly accelerating. It is expected that by 2030, the production proportion of electric v…
With the rapid growth in sales of pure electric vehicles (BEV) and plug-in hybrid electric vehicles (PHEV), the development of the electric vehicle market is constantly accelerating. It is expected that by 2030, the production proportion of electric vehicles will achieve double-digit growth, increasing from 20% in 2024 to around 45%. To meet the growing demand for high-voltage automotive IGBT chips, Infineon Technologies, a global semiconductor leader in power systems and the Internet of Things, has launched a new generation of products, including EDT3 (third-generation Electric Drive System) chips designed for 400 V and 800 V systems. And RC-IGBT chips tailored for the 800 V system. These products can enhance the performance of electric drive systems, especially suitable for automotive applications.
EDT3 and RC-IGBT bare chips are specifically designed to provide high-quality and reliable performance, assisting customers in developing custom power modules. The new generation EDT3 has made significant progress compared to EDT2. Its total loss under high load has been reduced by 20%, while maintaining efficiency under low load. This progress is attributed to the optimization measures that significantly reduce chip loss and increase the maximum junction temperature, enabling the chip to achieve a balance between high-load performance and low-load efficiency. Therefore, electric vehicles using the EDT3 chip can achieve longer driving ranges and reduce energy consumption, thereby providing a more sustainable and cost-effective driving experience.
Robert Hermann, vice president of Infineon Technologies' automotive high-voltage chips and discrete devices product line, said: "As a leading IGBT technology supplier, Infineon is committed to providing products with outstanding performance and reliability." The EDT3 solution is based on our unwavering pursuit of innovation and low-carbonization, helping customers achieve their desired results in many of their applications.
The EDT3 chipset offers two voltage levels of 750 V and 1200 V, with a high output current, making it suitable for main inverter applications in various electric vehicles such as pure electric vehicles, plug-in hybrid electric vehicles, and extended-range electric vehicles (REEVs). The product has reduced the size of the chip and optimized the design, facilitating the manufacturing of smaller modules and lowering the overall system cost. In addition, its maximum virtual junction temperature is 185°C, and the maximum collector-emitter rated voltages are 750 V and 1200 V respectively, making it suitable for high-performance applications. Through this product, car manufacturers can design more efficient and reliable powertrain systems, helping to extend driving range and reduce emissions.
Dr. Shen Jie, the founder and general manager of Zhenqu Technology, said, "As Zhenqu Technology's main IGBT chip supplier and partner, Infineon has consistently provided us with innovative solutions to achieve system-level advantages." The latest EDT3 chip optimizes loss and loss distribution, supports higher operating temperatures, and offers a variety of metallization options. These features not only reduce the area of silicon wafers required per ampere, but also accelerate the application of advanced packaging technologies. '
The 1200 V RC-IGBT enhances performance by integrating IGBT and diode functions on a single chip, achieving a higher current density compared to the separate IGBT and diode chipset solution. This advancement brings about a system cost advantage, benefiting from higher current density, scalable chip size and reduced assembly workload
Infineon's latest EDT3 IGBT chip technology has now been integrated into the HybridPACK™ Drive G2 automotive power module, providing more powerful performance and functionality for the entire module product portfolio. This module can provide a maximum power range of 250 kW at power levels of 750 V and 1200 V, enhancing usability. Its new features such as the next-generation phase current sensor integration option and on-chip temperature sensor help reduce system costs.
All chip products offer custom chip layouts, including on-chip temperature and current sensors. In addition, Infineon can also provide metallization options suitable for sintering, welding and bonding upon request.
Supply situation
Samples of the new EDT3 and RC-IGBT products are now available.
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Time:2025-06-19
Time:2025-06-19
Time:2025-06-19
Time:2025-06-19
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