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On 7 June, according to a report by BusinessPost, Changxin Memory has nearly caught up with South Korea in LPDDR technology applications across sectors such as smartphones, IT devices, robots, and autonomous vehicles, and has begun developing the next-generation LPDDR6 technology.

To avoid being easily overtaken, Samsung Electronics' DS Division Vice Chairman Jeon Yong-hyun is expected to develop and mass-produce the next-generation “LPDDR6” memory using the “1c DRAM” process by the second half of this year, with plans to supply it to tech giants like Qualcomm. 

The semiconductor industry believes that, given the current development pace, Changxin Memory could achieve LPDDR6 mass production as early as 2026 (having already commercialised LPDDR5 by the end of 2023), with a gap of less than a year from Samsung Electronics' mass production timeline.

Following the development sequence of DRAM processes: 1x (first generation), 1y (second generation), 1z (third generation), 1a (fourth generation), 1b (fifth generation), and 1c (sixth generation). With each generation, the line width becomes finer, thereby enhancing performance and energy efficiency.

SamMobile previously reported that Qualcomm is expected to adopt LPDDR6 memory in its next-generation laptop SoC, the ‘Snapdragon X Elite 2,’ which is set to debut at the Snapdragon Summit on 23 September this year. Further updates will be monitored.

BusinessPost noted that Changxin Memory has announced plans to gradually phase out DDR4 DRAM production by 2026 and transition to DDR5, with the goal of increasing monthly production to 300,000 wafer units by the end of this year (approximately 45% of Samsung Electronics' monthly production in 2024).

DigiTimes estimates that by the end of 2025, DDR5, LPDDR5X, and LPDDR5 will account for approximately 60% of Changxin Memory's total DRAM production.