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Infineon IMZA120R040M1H/IMZA120R040M1HXKSA1 1200V SiC MOSFET in TO247-4 package

Infineon IMZA120R040M1H/IMZA120R040M1HXKSA1 1200V SiC MOSFET in TO247-4 package

Source:our siteTime:2022-08-23Views:

Supply and demand of new original Infineon IMZA120R040M1H/IMZA120R040M1HXKSA1 1200V silicon carbide MOSFET in TO247-4 package, Mingjiada only makes original, quality assurance, price advantage, the actual order has an acceptance price for details, ple…

Supply and demand of new original Infineon IMZA120R040M1H/IMZA120R040M1HXKSA1 1200V silicon carbide MOSFET in TO247-4 package, Mingjiada only makes original, quality assurance, price advantage, the actual order has an acceptance price for details, please contact E-mail:sales@hkmjd .com! ! !


Supply model: IMZA120R040M1H/IMZA120R040M1HXKSA1

Year: latest 21+

Description: Through Hole N Channel 1200 V 55A(Tc) 227W(Tc) PG-TO247-4-8


Description: Infineon's SiC MOSFETs in TO247 4-pin package reduce parasitic source inductance effects on the gate circuit, resulting in faster switching and higher efficiency.


Specification

FET type N channel

Technology SiCFET (Silicon Carbide)

Drain-source voltage (Vdss) 1200 V

Current at 25°C - Continuous Drain (Id) 55A (Tc)

Driving Voltage (Max Rds On, Min Rds On) 15V, 18V

On-resistance (max) at various Id, Vgs 54.4 milliohms @ 19.3A, 18V

Vgs(th) (max) at different Id 5.2V @ 8.3mA

Gate charge (Qg) (max) at various Vgs 39 nC @ 18 V

Vgs (max) +20V, -5V

Input Capacitance (Ciss) at Vds (Maximum) 1620 nF @ 25 V

FET function -

Power Dissipation (Max) 227W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Through Hole

Supplier Device Package PG-TO247-4-8

Package/Enclosure TO-247-4


Benefit

highest efficiency

Reduce cooling work

higher frequency operation

Increase power density

Reduce system complexity


Application

battery formation

Electric vehicle fast charging

Motor Control and Drive

Power Management (SMPS) - Reference Design

Photovoltaic energy system solutions


The company also acquired Infineon IMZA120R040M1H/IMZA120R040M1HXKSA1 1200V silicon carbide MOSFET, and recovered various electronic waste inventory at high prices for a long time: electronic components, 5G modules, new energy modules, 5G chips, base station ICs, artificial intelligence ICs, network ICs, Bluetooth IC, mobile phone IC, automotive IC, communication IC, home appliance IC, power IC, driver IC, IoT IC and module chips, connectors, radio frequency modules, memory, relays, MOS tubes, microcontrollers, secondary and tertiary tubes and other products .


Recycling specific process:

1. You can simply classify the backlog of IC/module inventory, and determine the model, brand, production date, quantity, etc.;

2. Please send the inventory list to our evaluation team by fax or email;

3. Wait for the purchase quotation from the company's professionals, and after reaching an agreement, the two parties negotiate the specific transaction method for delivery;

4. Only regular sources of goods are recycled, such as agents, traders, terminal factories, etc., and sources that are not regular sources are not accepted.


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