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Supply ON Transistors——Silicon Carbide (SiC) Transistors, IGBT Transistors, MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd.——Long-term supply of [ON] full range of transistors, covering silicon carbide (SiC) transistors, IGBT transistors, MOSFET transistors and other products, the company is committed to providing customers with high-performance, high-reliability power devices for a long time.

Mingjiada Electronics has been supplying the following ON transistors for a long time:

I. Silicon Carbide (SiC) Transistors

Silicon Carbide (SiC) material with its high breakdown field strength, high thermal conductivity and other characteristics, so that the SiC MOSFET and SiC Schottky diode in high-voltage, high-temperature and high-frequency applications in the excellent performance.

Typical product model:

FFSH40120A: 1200V/40A SiC Schottky diode with very low reverse recovery loss, which can be used with SiC MOSFETs to build a high-efficiency all-SiC system.

NVHL080N120SC1: 1200V/80mΩ SiC MOSFET with switching frequency up to MHz level, suitable for on-board charger (OBC) and PV inverter.

NV4TH015N090SC1: 900V/15mΩ SiC MOSFET module with integrated half-bridge topology for industrial power supplies and energy storage systems.

II. IGBT Transistors

IGBT (Insulated Gate Bipolar Transistor) combines the high input impedance of a MOSFET with the high current capability of a bipolar transistor and is widely used in inverters, motor drives and industrial frequency converters.

Typical product model:

FGH40T65SQD: 650V/40A high-speed IGBT with optimised short-circuit tolerance for welding equipment and motor control.

NXV15F120T1: Automotive-grade IGBT module with integrated reverse diode, compliant with AEC-Q101 for electric vehicle drive systems.

NGTB40N120FL3WG: 1200V/40A IGBT with Field Stop III technology, low switching loss, suitable for solar inverters and UPS systems.

III. MOSFET Transistors

Onsemi's MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are known for their low on-resistance (RDS(on)), high switching frequency, and low losses, and are suitable for power conversion, motor drive, and other scenarios.

Typical product model:

FDBL86062: Dual N-channel MOSFET with 60V withstand voltage, designed for synchronous rectification, suitable for high frequency switching power supply.

FDMS86101: MOSFET with PowerTrench® technology, 100V withstand voltage, current capability up to 120A, suitable for EV charging modules.

NTMFS5C410N: N-channel MOSFET with 40V withstand voltage, 100A continuous current and RDS(on) as low as 0.41mΩ, suitable for server power supplies and DC-DC converters.

In addition, Mingjiada Electronics also supplies [ON] power modules for a long time, covering IGBTs, MOSFETs, SiC, Si/SiC hybrid modules, diodes, SiC diodes, and smart power modules, etc.; and also [ON] sensors, covering image sensors, inductive sensing, Image Signal Processors (ISPs), Image Sensor Modules, Thermal Management, and Photodetectors (SPADs.), as well as other products, SiPM), thermal management, ultrasonic sensors, ambient light sensors, electrochemical sensors AFE and other products.

For more product information or to obtain samples, please contact our team at Mingjiada Electronics.

QQ：1668527835

Tel：13410018555

Email：chen13410018555@163.com

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