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Semiconductor manufacturer ROHM recently announced the launch of an isolated gate driver IC "BM6GD11BFJ-LB" suitable for 600V-class high-voltage GaN HEMT drives. When used in combination with this product, GaN devices can achieve more stable driving during high-frequency and high-speed switching processes, which helps to further reduce the size and improve efficiency for high-current applications such as motors and server power supplies.

The new product is ROHM's first isolated gate driver IC for high-withstand voltage GaN HEMT. In the operation of switches where the voltage fluctuates sharply and repeatedly, the use of this product can isolate the device from the control circuit, thereby ensuring the safe transmission of signals.

The new product effectively reduces parasitic capacitance by adopting ROHM's independently developed on-chip isolation technology, achieving high-frequency driving up to 2MHz. By fully leveraging the high-speed switching characteristics of GaN devices, it not only helps to make application products more energy-efficient and achieve higher performance, but also reduces the installation area by facilitating the miniaturization of peripheral components.

In addition, the immunity index of the isolated gate driver IC - common mode transient immunity (CMTI) reaches 150V/ns (nanoseconds), which is 1.5 times that of previous products. It can effectively prevent the misoperation caused by the disturbing high conversion rate during GaN HEMT switching, thereby contributing to the stable control of the system. The minimum pulse width is reduced by 33% compared with previous products, and the conduction time is shortened to only 65ns. Therefore, although the frequency is higher, the minimum duty cycle can still be ensured, thereby keeping the loss at a lower level.

The gate drive voltage range of GaN devices is 4.5V to 6.0V, and the insulation withstand voltage is 2500Vrms. The new product can fully unleash the performance potential of various high-withstand voltage GaN devices (including the newly added 650V withstand voltage GaN HEMT "GNP2070TD-Z" in the ROHM EcoGaN™ series product lineup). The consumption current at the output end is only 0.5mA (maximum), reaching the industry's ultra-low power consumption level. Additionally, it can effectively reduce standby power consumption.

The new product began mass production in March 2025 (sample price: 600 yen per piece, excluding tax). In addition, the new product has also started to be sold online and can be purchased through e-commerce platforms.

"Development Background"

Against the backdrop of the annual increase in global energy consumption, energy-saving countermeasures have become a common issue faced by all countries in the world. It is particularly worth noting that, according to the survey, the electricity consumed by "motors" and "power sources" accounts for approximately 97% of the global total electricity consumption. The key to improving the efficiency of "motors" and "power supplies" lies in the new generation of power devices responsible for power control and conversion, which are made of new materials such as silicon carbide (SiC) and gallium nitride (GaN).

ROHM has fully leveraged its accumulated technological advantages in the development of silicon semiconductors and SiC isolated gate driver ics, successfully developing its first batch of products - isolated gate driver ics optimized specifically for GaN device drivers. In the future, ROHM will provide gate driver ics for GaN device drives and GaN devices in conjunction, offering more convenience for the design of application products.

< Application Example >

◇ Industrial equipment: Power supplies for photovoltaic inverters, ESS (energy storage systems), communication base stations, servers, industrial motors, etc

Consumer electronics: white goods, AC adapters (USB chargers), computers, televisions, refrigerators, air conditioners

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