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ST launches Two High Voltage GaN Half Bridge Gate Drivers - STDRIVEG610 and STDRIVEG611
May 27, 2025 - STMicroelectronics has introduced two high-voltage GaN half-bridge gate drivers that give developers greater design flexibility and more features to improve the energy efficiency and robustness of their target applications.The new STDRI…
May 27, 2025 - STMicroelectronics has introduced two high-voltage GaN half-bridge gate drivers that give developers greater design flexibility and more features to improve the energy efficiency and robustness of their target applications.
The new STDRIVEG610 and STDRIVEG611 offer power conversion and motor control designers two options for controlling GaN power devices that can improve energy efficiency, power density and robustness in consumer electronics and industrial applications.
The STDRIVEG610 targets gate drive applications that require start-up times in the 300ns class, a critical parameter for LLC or ACF power conversion topologies, to ensure accurate control of power tube turn-off intervals in burst mode.
The STDRIVEG611 is an optimised design for hard switching in motor control applications, adding safety features such as high-side UVLO undervoltage protection and smart shutdown for overcurrent protection.
Both devices are suitable for both hard and soft switching topologies and have built-in interlocking to prevent cross conduction. The STDRIVEG610 improves the performance of power adapters, chargers, and power factor correction (PFC) circuits, while the STDRIVEG611 saves space, improves efficiency, and improves reliability for home appliances, pumps, compressors, industrial servo drive motors, and factory automation drives. drives.
To simplify design, both devices incorporate a high-side bootstrap diode, as well as high-current-capable 6V high- and low-side linear regulators with transmission delays of less than 10ns. Each driver has separate draw and pull current paths of 2.4A/1.2Ω and 1.0A/3.7Ω for excellent drive performance.
On-chip integrated UVLO protection is used to protect the high and low side 600V GaN power switching tubes from inefficient or hazardous operation. In addition, both devices feature thermal protection with dV/dt tolerances up to ±200V/ns. Input pin voltages extend from 3.3V to 20V, simplifying the controller interface circuitry. Both devices have standby pins to save power during non-operational periods or in burst mode, and separate supply ground pins for Kelvin source driving or connecting shunt resistors.
The STDRIVEG610 and STDRIVEG611 integrate a rich set of features to help reduce bill-of-materials costs and are available in a compact 4mm x 5mm QFN package to save board space.
Time:2025-05-29
Time:2025-05-29
Time:2025-05-29
Time:2025-05-29
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