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Supply ON Power Modules: IGBT Modules, MOSFET Modules, Smart Power Modules, SiC Modules

Shenzhen Mingjiada Electronics Co., Ltd. is a professional electronic components supplier, adhering to the purpose of ‘serving customers, benefiting customers’, through continuous optimisation of supply chain management and expansion of product lines, has developed into a global benchmark enterprise in the field of electronic components distribution.

Main products 5G chips, new energy ICs, IoT ICs, Bluetooth ICs, Telematics ICs, automotive grade ICs, communication ICs, AI ICs, memory ICs, sensor ICs, microcontroller ICs, transceiver ICs, Ethernet ICs, WiFi chips, wireless communication modules, connectors and other electronic components Supply Advantage

Supply Advantage

Huge inventory system: the company has more than 2 million types of inventory advantageous models, covering military-grade, industrial-grade, communications and all kinds of cold and hot high-tech components, can quickly respond to the urgent needs of customers, significantly shorten the customer's R & D and production cycle.

Strict quality assurance: all components supplied are from original manufacturers or authorised channels, providing complete batch traceability and warranty services. The company strictly implements ISO9001:2014 quality management system to ensure the reliability and consistency of each product.

Efficient Logistics Network: With branches and logistics partners around the world, we are able to achieve fast delivery of 1-3 days and support flexible sourcing model as small as 1 piece. This efficient supply chain capability is particularly suited for small lot requirements in the R&D phase and for urgent order processing.

IGBT modules: the perfect combination of high power density and reliability

Insulated Gate Bipolar Transistor (IGBT) modules, as the core devices of modern power electronic systems, dominate the field of medium to high power applications.ON's IGBT modules are known for their low loss, high switching frequency and strong robustness, and are widely used in key equipment such as electric motor drives, photovoltaic inverters, Uninterruptible Power Supplies (UPSs), and industrial frequency converters. These modules use advanced Trench Field Stop technology to achieve an optimal balance between conduction and switching losses, significantly improving overall system efficiency.

The technical advantages of the ON IGBT module are mainly reflected in three aspects: first, it adopts a refined trench gate structure, which significantly reduces the on-state voltage drop (VCE(sat)) and reduces the power loss in the on-state; second, the optimised design of the field termination layer enables the module to have faster switching speed and lower switching loss, which is suitable for high-frequency application scenarios; and lastly, the module integrates an internal temperature sensor and current detection function, which facilitates the implementation of the system's overall efficiency. The IGBT modules are available in voltage ratings from 600V to 1700V and in current capacities ranging from 30A to hundreds of amperes to meet the needs of applications at different power levels.

MOSFET Modules: Ideal for High-Speed Switching and High-Efficiency Conversion

Metal-oxide-semiconductor field-effect transistor (MOSFET) modules demonstrate unique advantages in high-frequency switching applications. ON's MOSFET modules are widely used in power conversion, automotive electronics, and industrial control systems due to their excellent switching performance and low on-resistance characteristics. Compared with discrete MOSFET devices, the modular package provides higher power density, better thermal performance and simplified system design, which is particularly suitable for medium to high power application scenarios.

The technical characteristics of the ON MOSFET module are mainly reflected in four aspects: first, the MOSFET module with Super Junction (Super Junction) technology achieves very low on-resistance (RDS(on)) in high-voltage applications, which significantly reduces conduction losses; second, the optimised gate design enables faster switching and reduces the energy loss during the switching process; and third. Thirdly, the module integrates multiple MOSFET chips inside, which can support various topologies such as full bridge, half bridge and six groups; finally, the advanced packaging technology ensures good thermal conduction performance, allowing the module to work stably in high temperature environments.The voltage level of MOSFET module covers 40V to 900V, which meets the diversified needs from low-voltage DC-DC converter to high-voltage power supply system.

Intelligent Power Modules (IPMs): The Perfect Embodiment of Integration and High Reliability

Intelligent Power Modules (IPMs) represent the highest level of power electronics integration. ON's IPM products integrate high-voltage power devices, gate drive circuits, and protection functions into a single package, dramatically simplifying system design and improving reliability. Particularly suited to motor drive scenarios in consumer electronics, industrial control and automotive applications, these modules offer a wide range of power ratings from 50W to 10kW, and support a variety of topologies such as three-phase inverters, PFC (Power Factor Correction) and input bridge rectifiers.

The core advantages of the ON IPM are mainly reflected in four aspects: first, the highly integrated design reduces the number of external components and PCB area, lowering system complexity and cost; second, the built-in driver circuit optimises the switching characteristics of the power devices while reducing electromagnetic interference (EMI); third, the comprehensive protection functions (including overcurrent, overheat, and under-voltage protections, etc.) enhance system reliability The IPM product line covers low and medium voltage applications up to 600V, with current capabilities ranging from a few amperes to tens of amperes to meet the needs of different power levels.

Silicon Carbide (SiC) Module: A Technology Benchmark for Next-Generation Power Devices

Silicon carbide (SiC) power modules represent the cutting-edge development direction of power semiconductor technology. ON's SiC modules use the third-generation semiconductor material silicon carbide (SiC) as the base device, which has significant advantages such as high-temperature tolerance, high-frequency characteristics, and low conduction loss, and is driving the upgrading of technology areas such as electric vehicles, solar inverters, and data centre power supplies. Compared with traditional silicon-based power devices, SiC modules can increase system efficiency by 3-5% and reduce energy consumption by more than 30%, while significantly reducing system size and weight, making them an ideal solution to meet energy efficiency and power density challenges.

The technical advantages of ON SiC modules are mainly reflected in five aspects: firstly, the high critical breakdown electric field strength of SiC material allows the device to operate at higher voltages while reducing the thickness of the drift region, which lowers the on-resistance; secondly, the wide-bandwidth forbidden characteristic of SiC (3.26eV) allows the device to operate at higher temperatures (above 200°C), which reduces the complexity of the heat dissipation system; thirdly. SiC devices have virtually no reverse recovery current, dramatically reducing switching losses and allowing for higher frequency operation; fourth, the excellent thermal conductivity (about three times that of silicon) improves power density and allows for a more compact system; and lastly, the improved overall system efficiency reduces energy consumption and heat dissipation requirements, resulting in a virtuous cycle.SiC modules include two types of modules, pure SiC modules and Si/SiC hybrid modules, with voltage levels of 1200V and 1200V. The voltage levels are mainly 1200V and 1700V to meet the needs of high-voltage applications.