Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

SK Hynix announced on 23 May that it has successfully developed UFS 4.1, the world's highest 321-layer 1Tb (Terabit) TLC (Triple Level Cell) 4D NAND flash memory, as a mobile solution product.

SK Hynix said, ‘In order to achieve stable operation of on-device AI on mobile devices, NAND flash solution products must combine high performance and low power consumption. With this UFS 4.1 product optimised for AI workloads, the company will further strengthen its memory technology leadership in the flagship smartphone market.’

As the demand for end-side AI continues to grow, the balance between computing performance and battery efficiency in end devices is becoming increasingly critical, and ultra-thin designs and low-power features have become industry standards for mobile devices, according to the company.

In response to this trend, the company has developed a new product that is 7% more energy efficient than its predecessor, which was based on 238-layer NAND flash. At the same time, the thickness of the product has been successfully reduced from 1mm to 0.85mm, enabling it to fit into ultra-thin smartphones.

Upon enquiry, the product supports peak sequential reads and data transfer rates of up to 4300MB/s for fourth-generation UFS products, and random read and write speeds, which determine the multitasking capability of mobile devices, have been increased by 15% and 40%, respectively, compared to previous-generation products, making it the world's leading UFS 4.1 product in existence.

The product is available in 512GB and 1TB capacities. The company plans to deliver samples to customers for the validation process this year and will enter mass production in the first quarter of next year.