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Supply New and Original trench silicon carbide MOSFET "IMBG120R220M1H_IMBG120R220M1HXTMA1"

Supply New and Original trench silicon carbide MOSFET "IMBG120R220M1H_IMBG120R220M1HXTMA1"

Source:our siteTime:2022-08-16Views:

Mingjiada launches new original IMBG120R220M1H_IMBG120R220M1HXTMA1 1200V trench SiC MOSFETModel: IMBG120R220M1H_IMBG120R220M1HXTMA1Year: latest 21+Package: TO-263-7Description: IMBG120R220M1H 1200 V CoolSiC™ trench SiC MOSFET in TO-263-7 package.Spec…

Mingjiada launches new original IMBG120R220M1H_IMBG120R220M1HXTMA1 1200V trench SiC MOSFET


Model: IMBG120R220M1H_IMBG120R220M1HXTMA1

Year: latest 21+

Package: TO-263-7

Description: IMBG120R220M1H 1200 V CoolSiC™ trench SiC MOSFET in TO-263-7 package.


Specifications

FET Type N-Channel

Technology SiCFET (Silicon Carbide)

Drain-source voltage (Vdss) 1200 V

Current at 25°C - Continuous Drain (Id) 13A (Tc)

On-resistance (max) at various Id, Vgs 294 milliohms @ 4A, 18V

Vgs(th) (max) at different Id 5.7V @ 1.6mA

Gate charge (Qg) (max) at different Vgs 9.4 nC @ 18 V

Vgs (max) +18V, -15V

Input Capacitance (Ciss) at Vds (max) 312 pF @ 800 V

FET function Standard

Power Dissipation (Maximum) 83W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PG-TO263-7-12

Package/Case TO-263-8, D²Pak (7-lead + tab), TO-263CA


Advantage

Improve efficiency

Achieve higher operating frequencies

Increase power density

Reduce cooling work

Reduce system complexity and cost

SMD package, can achieve natural convection cooling without additional heatsink, so it can be directly integrated into the PCB


Application field

Uninterruptible Power Supply (UPS)

Electric vehicle fast charging

Industrial Motor Drive and Control

Solar System Solutions


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