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May 21, 2025 - Nexperia, a global semiconductor manufacturer, announced a series of highly efficient and robust automotive-grade silicon carbide (SiC) MOSFETs with on-resistance (RDS(on)) of 30 mΩ, 40 mΩ and 60 mΩ, respectively.These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, and NSF060120D7A0-Q) offer industry-leading factors of performance (FoM), were previously supplied in industrial-grade specifications, and are now AEC-Q101 certified. This makes them ideally suited for automotive applications such as on-board chargers (OBCs) and traction inverters in electric vehicles (EVs), as well as DC-DC converters, and heating, ventilation and air conditioning (HVAC) systems. The switches are available in the increasingly popular surface-mount D2PAK-7 package, which is better suited for automated assembly operations than through-hole devices.

RDS(on) is a key performance parameter for SiC MOSFETs as it affects conduction losses. However, focusing on nominal values alone ignores the fact that RDS(on) can increase by more than 100% as the device's operating temperature rises, resulting in a significant increase in conduction losses. Temperature stability is even more important with SMD packaging technology as the device is cooled through the PCB than with through-hole technology, and Nexperia recognises that this is a limiting factor in the performance of many existing SiC devices and has leveraged the properties of its innovative process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability over the 25°C to 175°C operating temperature range, with only a 38% increase in nominal RDS(on). This feature enables customers to achieve higher output power in applications where Nexperia has a higher 25°C rated RDS(on) than other suppliers without any performance impact.

‘This feature enables the selected Nexperia SiC MOSFET device to achieve higher power compared to devices with similar RDS(on) ratings from other suppliers, resulting in a significant cost advantage for customers at the semiconductor level. In addition, more relaxed cooling requirements, more compact passive components and higher achievable efficiencies give customers greater design freedom and lower total cost of ownership. We are particularly pleased that these products are now available for the automotive market, and their performance and efficiency benefits will make a real difference in next-generation automotive designs.’ said Edoardo Merli, senior vice president and head of the Wide Bandgap, IGBT and Module (WIM) business unit.