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Toshiba Introduces New 650V 3rd Generation SiC MOSFETs in DFN8×8 Package

-Four New Devices Help Boost Efficiency and Power Density in Industrial Equipment - TOSHIBA, Japan

May 20, 2025 - Toshiba Electronic Components and Storage Devices Corporation (‘Toshiba’) today announced the launch of four new 650V Silicon Carbide (SiC) MOSFETs - -TW031V65C, TW054V65C, TW092V65C and TW123V65C. ‘TW123V65C’. Equipped with its latest[1] 3rd generation SiC MOSFET technology and available in a compact DFN8×8 package, these devices are suitable for industrial equipment such as switching power supplies and photovoltaic generator power conditioners. Volume shipments of the four devices are being supported today.

The four new devices are the first to feature 3rd generation SiC MOSFETs in a compact surface-mount DFN8×8 package, which reduces size by more than 90 per cent compared to through-hole packages such as TO-247 and TO-247-4L(X) and improves device power density. Surface mount packages also allow the use of smaller parasitic impedance[2] components than through-hole type packages, resulting in lower switching losses.The DFN8×8 is a 4-pin[3] package that supports Kelvin connections to its gate-driven signal source terminals. This reduces the impact of the source line inductance inside the package and enables high-speed switching performance; in the case of the TW054V65C, for example, the turn-on loss is reduced by approximately 55% and the turn-off loss is reduced by approximately 25%[4] compared to Toshiba's existing products, helping to reduce power loss in devices.

Toshiba will continue to expand its SiC power device lineup in the future, contributing to improved device efficiency and increased power capacity.

Applications:

Switching power supplies for servers, data centres, communication equipment, etc.

Electric vehicle charging stations

Photovoltaic inverters

Uninterruptible power supplies

Features:

DFN 8×8 surface mount package for equipment miniaturisation and automated assembly, low switching losses

Toshiba 3rd generation SiC MOSFETs

Good temperature dependence of drain-source on-resistance by optimising drift resistance and channel resistance ratio

Low drain-source on-resistance × gate leakage charge

Low diode forward voltage: VDSF = -1.35V typical (VGS = -5V)