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Supply Renesas FET Driver: 3-Phase FET Driver, GaN FET Driver, Synchronous Buck FET Driver

Supply Renesas FET Driver: 3-Phase FET Driver, GaN FET Driver, Synchronous Buck FET Driver

Source:our siteTime:2025-05-17Views:

Supply Renesas FET Driver: 3-Phase FET Driver, GaN FET Driver, Synchronous Buck FET DriverShenzhen Mingjiada Electronic Co., Ltd. as a professional electronic components supplier, long-term stock a large number of spot inventory, mainly engaged in: IC…

Supply Renesas FET Driver: 3-Phase FET Driver, GaN FET Driver, Synchronous Buck FET Driver


Shenzhen Mingjiada Electronic Co., Ltd. as a professional electronic components supplier, long-term stock a large number of spot inventory, mainly engaged in: IC IC, 5G chip, new energy IC, Internet of Things chip, Bluetooth chip, automotive chips, artificial intelligence IC, Ethernet IC, memory chips, sensors, IGBT modules, and a series of products, the source of supply, the price is good and cheap, fast delivery, and wholeheartedly provide high-quality electronic components supply services to the vast number of end customers and distributors and traders. We are dedicated to providing high quality electronic components supply service to our end customers and distributors.


Three-phase FET driver solutions

Three-phase FET drives play a critical role in motor control and high power conversion systems.Designed to drive PMSM (permanent magnet synchronous motors) and BLDC (brushless DC motors), Renesas three-phase FET drives efficiently control external MOSFETs or IGBTs for precise motor speed and torque regulation.


Product Features and Technical Benefits

The Renesas three-phase FET driver family offers the following outstanding features:

Highly integrated design: Integration of six independent gate drive channels allows direct drive of high-side and low-side power switching devices in a three-phase bridge topology, significantly reducing the number of peripheral components and PCB area.

Wide voltage range support: The operating voltage range covers 8V to 60V DC, making it suitable for motor drive applications in a wide range of power systems, including 12V, 24V and 48V.

Programmable drive capability: Gate drive current can be flexibly configured between 0.5A, 1A and 1.5A to meet the drive requirements of MOSFETs of different power levels and optimise switching loss and EMI performance.

Comprehensive protection functions: Built-in over-current protection, short-circuit protection, under-voltage lockout (UVLO) and overheating protection, etc. Detailed diagnostic information is provided through the SPI interface to enhance system reliability.

Advanced Current Detection: Integrated three floating sense amplifiers with programmable gain (5, 10, 20 times) support high-precision phase current detection, facilitating the implementation of FOC (Field Oriented Control) algorithms.

Flexible Interface Options: Supports SPI communication and standalone operation modes, provides 3-wire or 6-wire programmable control interface, adapting to different system architecture requirements.


Typical Application Scenarios

Renesas three-phase FET drives are widely used in the following areas:

Industrial automation: To drive servo motors in industrial robots, CNC machine tools and textile machinery, providing high-precision position control and fast dynamic response.

Automotive electronics: Motor control in automotive subsystems such as electric power steering (EPS), electric water pumps and cooling fans.

Home Appliances and Consumer Electronics: Driving BLDC motors in refrigerator compressors, air conditioning fans and high-end home appliances for energy efficient operation.

New energy field: apply to motor drive in solar tracking system and wind power pitch control.


GaN FET Driver Solutions

With the rapid development of gallium nitride (GaN) power devices, there is a growing demand for high-performance GaN FET drivers. Renesas GaN FET drivers are optimised to drive enhanced GaN power transistors, giving full play to the high-frequency and high-efficiency advantages of GaN devices, and are suitable for high-density power conversion and RF power applications.


Product Core Features

The Renesas GaN FET driver family offers the following technology highlights:

High-speed switching support: Propagation delays as low as 35ns, delay matching accuracy of 1.5ns (typical), and support for MHz-level switching frequencies, giving full play to the high-speed advantages of GaN devices.

Independent gate control: High-side and low-side drivers are designed with independent inputs to provide maximum control flexibility, and separate output pins allow separate adjustment of turn-on and turn-off strengths.

Strong drive capability: Peak drive currents of up to 1.2A and flood current capability of up to 5A ensure fast charge/discharge of the GaN FET gate, reducing switching losses.

Integrated bootstrap diode: Built-in 100V bootstrap diode simplifies high-side driver circuit design, and internal 5V clamp function prevents gate voltage from exceeding the maximum rating of the GaN FET.

Robust pull-down characteristics: A 0.6Ω pull-down resistor and 2.1Ω pull-up resistor configuration ensures reliable gate shutdown and prevents accidental conduction during switching.

Compact package: 12-pin DSBGA package with optimised layout to minimise parasitic inductance for high frequency applications.


Application Areas and Benefits

Renesas GaN FET drivers excel in the following applications:

High-frequency DC-DC converters: Synchronous buck and boost converters for server power supplies, communication equipment power supplies, and switching frequencies up to several MHz to significantly increase power density.

Wireless charging systems: Driving GaN power devices for high efficiency energy transfer to support fast charging standards.

Automotive electronics: AEC-Q100-compliant power conversion for on-board chargers (OBCs) and 48V light hybrid systems.

RF power amplification: RF power amplifier driver for 5G base stations and radar systems.


Synchronous Buck FET Driver Solutions

Synchronous buck FET drivers are one of the key components in DC-DC buck conversion applications, and Renesas synchronous buck FET drivers, such as the ISL95808HRZ-T, are optimised to drive two N-channel power MOSFETs in synchronous rectifier buck converters, which are widely used in mobile computing, communication devices and automotive electronics.


Technical Characteristics and Performance Parameters

Renesas synchronous buck FET drivers have the following distinguishing features:

High-frequency switching capability: Supports switching frequencies up to 2MHz for high power density designs that reduce passive component size.

Low on-resistance: 0.5Ω on-resistance and 4A current sinking capability ensures fast switching of power MOSFETs and reduced conduction losses.

Adaptive breakdown protection: Prevents simultaneous conduction of high-side and low-side MOSFETs, improving system reliability.

Low-power design: Shutdown supply current of only 3µA (at 5V) significantly reduces standby power consumption; diode emulation mode improves light-load efficiency.

Fast dynamic response: Fast output rise and fall times and low propagation delays optimise the transient response performance of the converter.

Integrated protection features: Built-in VCC POR (power-on reset) function, tri-state PWM input supports power stage shutdown for enhanced system safety.

Optimised thermal performance: Designed for mobile computing applications that require high efficiency and excellent thermal performance.


Typical Application Solutions

Renesas synchronous buck FET drivers are primarily used in the following scenarios:

Mobile processor power: Provides core voltage regulation for Intel® and AMD™ mobile microprocessors, working with a multi-phase buck PWM controller to form a complete single-stage core regulator solution.

High-current DC-DC conversion: DC-DC converters for high-current, low output voltage (e.g. below 1V) to meet the power needs of modern CPUs and GPUs.

Power supply for communication equipment: Efficient and compact power solutions for devices such as FPGAs and ASICs in base stations and network equipment.

Automotive electronic systems: meets automotive-grade requirements for in-vehicle power management of infotainment systems and ADAS modules.


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