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NTBGS001N06C: Power MOSFET, 60 V, 1.1 mΩ, 342 A, Single N−Channel, D2PAK7

Introduction

The NTBGS001N06C is a small size, compact design MOSFET with low RDS(on) and low capacitance. Low RDS(on) values minimize on-going losses, and low capacitance minimizes driver losses.

The NTBGS001N06C has the following main parameters:

FET type: N channel

Technology: MOSFET (Metal oxide)

Drain-source voltage (Vdss) : 60 V

Current at 25°C - Continuous drain (Id) : 42A (Ta), 342A (Tc)

Drive voltage (Max Rds On, min Rds On) : 10V, 12V

On-resistance (Max.) for different ids and Vgs: 1.1 milliohm@112A, 12V

Vgs(th) (Max.) for different ids: 4V@562 µA

Gate charge (Qg) at different Vgs (Max.) : 139 NC-@10 V

Vgs (Max.) : ±20V

Input capacitance (Ciss) at different Vds (Max.) : 11110 PF-@30 V

FET function: -

Power dissipation (Max) : 3.7W (Ta), 245W (Tc)

Operating temperature: -55°C ~ 175°C (TJ)

Mounting type: Surface mount type

Device Package: TO-263 (D2PAK)

These parameters make NTBGS001N06C suitable for circuit designs that require high currents and high efficiency, especially in applications such as power conversion and motor control.

NTBGS001N06C has the following key features:

• Low RDS (on) minimizes on-off losses

• Low QG and capacitance to minimize drive losses

• Reduced switching noise /EMI

Lead-free, halogen/brominated flame retardants (BFR) free and RoHS compliant

Application scenario

The NTBGS001N06C is suitable for applications requiring high current and high voltage resistance, including:

• Power tools, battery operated vacuum cleaners

• Drones/drones, material handling

• BMS/ Storage, home automation

If you need to obtain [NTBGS001N06C] sample or purchase inquiry, you can contact Mingjiata Electronics by visiting the official website www.hkmjd.com.以上翻译结果来自有道神经网络翻译（YNMT）· 通用场景