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Superjunction devices support high power ratings and high density while enabling reduced conduction and switching losses for improved efficiency

Today Vishay announced a new Gen 4.5 650 V E-Series power MOSFET, the SiHK050N65E, which provides high efficiency and high power density for communications, industrial and computing applications. Compared to the previous generation of devices, the Vishay Siliconix N-channel SiHK050N65E offers a 48.2 % lower on-resistance and a 65.4 % lower resistance and gate charge product, an important factor of merit (FOM) for 650 V MOSFETs in power conversion applications.

Vishay has introduced a wide range of MOSFET technologies to support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required by the latest high tech devices. With the SiHK050N65E and other devices in the Gen 4.5 650 V E family, the company is addressing the need for improved efficiency and power density in two early stages of power system architecture, power factor correction (PFC) and subsequent DC/DC converter modules. Typical applications include servers, edge computing and supercomputers; UPS, high-intensity discharge (HID) lamps and fluorescent ballasts; switched-mode power supplies (SMPS) for communications; solar power inverters; welding equipment; induction heating systems; and electric drives and battery chargers.

Based on Vishay's latest energy-efficient E-Series superjunction technology, the SiHK050N65E is capable of achieving a typical low on-resistance of 0.048 Ω at 10 V for high-power applications exceeding 6 kW. At the same time, the 650 V device achieves an additional 50 V breakdown voltage, allowing it to operate stably over an input voltage range of 200 VAC to 277 VAC and comply with the Open Rack V3 (ORV3) standard of the Open Compute Project. In addition, the MOSFET's ultra-low gate charge of only 78 nC provides a superior FOM value of 3.74 ? *nC, which is critical for reducing conduction and switching losses, resulting in further energy savings and efficiency gains. This enables the device to meet specific titanium efficiency requirements in server power supplies, or achieve 96 % peak efficiency.

To optimise switching performance in hard-switching topologies such as PFC circuits and dual-switch feed-forward designs, the recently released MOSFETs feature low effective output capacitance values of 167 pF for Co(er) and 1119 pF for Co(tr). The devices achieve a new industry-low FOM of 8.0 ?*pF for resistance times Co(er). *The SiHK050N65E is available in a PowerPAK? 10 x 12 package with a Kelvin connection to reduce gate noise and improve dv/dt immunity. The MOSFET is RoHS compliant and halogen free, and has been specifically designed to withstand overvoltage transients in avalanche mode, with 100 per cent UIS testing to ensure its limits.

The SiHK050N65E is now available for sampling and volume production. For lead time information, please contact your local sales office.

About VISHAY

Vishay is one of the world's largest manufacturers of a family of discrete semiconductors and passive electronic components that are critical to innovative design in the automotive, industrial, computing, consumer, communications, aerospace and medical markets.