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STMicroelectronics Power Transistors STL33N60DM2 MOSFET N-Channel 600 V, 0.115 Ohm Typ.

STMicroelectronics Power Transistors STL33N60DM2 MOSFET N-Channel 600 V, 0.115 Ohm Typ.

Source:our siteTime:2024-01-10Views:

Shenzhen Mingjiada Electronics Co., Ltd STMicroelectronics STL33N60DM2 N-channel FDmesh II Plus™ Power MOSFETs, Brand New & Original, Quality Assurance!Model No: STL33N60DM2Series: MDmesh™ DM2 Product Status: On Sale FET Type: N-Channel Techn…

Shenzhen Mingjiada Electronics Co., Ltd STMicroelectronics STL33N60DM2 N-channel FDmesh II Plus™ Power MOSFETs, Brand New & Original, Quality Assurance!


Model No: STL33N60DM2

Series: MDmesh™ DM2  

Product Status: On Sale  

FET Type: N-Channel  

Technology: MOSFET (Metal Oxide)  

Drain-Source Voltage (Vdss): 600 V  

Current at 25°C - Continuous Drain (Id): 21A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 10V  

On-resistance (max) at different Id, Vgs: 140 mOhm @ 10.5A, 10V  

Vgs(th) at different Id (max): 5V @ 250µA  

Gate Charge (Qg) (Max) at Vgs: 43 nC @ 10 V  

Vgs (max): ±25V  

Input capacitance (Ciss) at varying Vds (max): 1870 pF @ 100 V  

Power Dissipation (Max): 150W (Tc)  

Operating Temperature: -55°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: PowerFlat™ (8x8) HV  

Package/Housing: 8-PowerVDFN


Introduction

ST's MDmesh DM2 series is ST's newest family of fast recovery diodes, 600V power MOSFETs, especially suited for ZVS phase-shift bridge topologies. They have a very small recovery charge and time (Qrr, trr) and a 20% lower RDS(on) (compared to the previous generation). High dV/dt strength (40V/ns) ensures higher system reliability.


Characteristics

Low gate charge and input capacitance

Lower RDS(on) x area compared to the previous generation

Low gate input resistance

Designed for switching applications

100% avalanche tested

Zener protected

High dv/dt and avalanche capability

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